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SQJA90EP-T1_GE3

MOSFET N-CH 80V 60A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJA90EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 241
  • Description: MOSFET N-CH 80V 60A POWERPAKSO-8 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 26 ns
Factory Lead Time 14 Weeks
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0076Ohm
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 57 mJ
Max Junction Temperature (Tj) 175°C
Height 1.267mm
Package / Case PowerPAK® SO-8
RoHS Status ROHS3 Compliant
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.6m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
See Relate Datesheet