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STD5N52U

STD5N52U datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STD5N52U
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 943
  • Description: STD5N52U datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lead Free Lead Free
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD5N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 11.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 16.9nC @ 10V
Factory Lead Time 12 Weeks
Rise Time 13.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Vgs (Max) ±30V
Mount Surface Mount
Fall Time (Typ) 15 ns
Mounting Type Surface Mount
Turn-Off Delay Time 23.1 ns
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Continuous Drain Current (ID) 4.4A
Threshold Voltage 3.75V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 30V
Packaging Cut Tape (CT)
Drain to Source Breakdown Voltage 525V
Series UltraFASTmesh™
Nominal Vgs 3.75 V
JESD-609 Code e3
Radiation Hardening No
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
Number of Terminations 2
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Resistance 1.28Ohm
See Relate Datesheet