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STL8N10LF3

STL8N10LF3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STL8N10LF3
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 747
  • Description: STL8N10LF3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Base Part Number STL8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 4.3W Ta 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Factory Lead Time 12 Weeks
Rise Time 9.6ns
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Mount Surface Mount
Vgs (Max) ±20V
Mounting Type Surface Mount
Fall Time (Typ) 5.2 ns
Package / Case 8-PowerVDFN
Number of Pins 8
Turn-Off Delay Time 50.6 ns
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Continuous Drain Current (ID) 20A
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 20V
Series Automotive, AEC-Q101, STripFET™ III
Drain-source On Resistance-Max 0.05Ohm
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 175°C
Number of Terminations 5
Height 1mm
Radiation Hardening No
ECCN Code EAR99
RoHS Status ROHS3 Compliant
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
See Relate Datesheet