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  • SUM85N15-19-E3

SUM85N15-19-E3

MOSFET N-CH 150V 85A D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SUM85N15-19-E3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 885
  • Description: MOSFET N-CH 150V 85A D2PAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Length 10.41mm
Width 9.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 19mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Voltage 150V
Power Dissipation-Max 3.75W Ta 375W Tc
Element Configuration Single
Current 85A
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 85A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 40 ns
Reverse Recovery Time 130 ns
Continuous Drain Current (ID) 85A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Max Junction Temperature (Tj) 175°C
Nominal Vgs 2 V
Height 4.826mm
See Relate Datesheet