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TTC008(Q)

TTC008(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-TTC008(Q)
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 266
  • Description: TTC008(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.1W
Number of Elements 1
Power Dissipation 1.1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 62.5mA, 500mA
Collector Emitter Breakdown Voltage 285V
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet