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VS-GB70NA60UF

VS-GB70NA60UF, IGBT Module, N-channel, Dual Emitter, Single, 111A max, 600V, 4-Pin SOT-227


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GB70NA60UF
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 147
  • Description: VS-GB70NA60UF, IGBT Module, N-channel, Dual Emitter, Single, 111A max, 600V, 4-Pin SOT-227 (Kg)

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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL RECOGNIZED, LOW CONDUCTION LOSS
Max Power Dissipation 447W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 447W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 111A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.23V
Turn On Time 277 ns
Vce(on) (Max) @ Vge, Ic 2.44V @ 15V, 70A
Turn Off Time-Nom (toff) 308 ns
IGBT Type NPT
NTC Thermistor No
Height 12.3mm
Length 38.3mm
Width 25.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet