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ZHB6792TC

Bipolar Transistors - BJT H-Bridge-70V


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZHB6792TC
  • Package: 8-SMD, Gull Wing
  • Datasheet: PDF
  • Stock: 150
  • Description: Bipolar Transistors - BJT H-Bridge-70V (Kg)

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Details

Tags

Parameters
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZHB6792
Pin Count 8
Qualification Status Not Qualified
Number of Elements 4
Polarity NPN
Configuration BRIDGE, 4 ELEMENTS
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Transistor Type 2 NPN, 2 PNP (H-Bridge)
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 2A
Collector Emitter Breakdown Voltage 70V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 1.25W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
See Relate Datesheet