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  • ZVN2110GTA

ZVN2110GTA

Trans MOSFET N-CH 100V 0.5A 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVN2110GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 408
  • Description: Trans MOSFET N-CH 100V 0.5A 4-Pin(3+Tab) SOT-223 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 4Ohm
Additional Feature FAST SWITCHING
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 500mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 6A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet