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  • ZVN4210GTA

ZVN4210GTA

MOSFET N-CH 100V 800MA SOT223


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVN4210GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 411
  • Description: MOSFET N-CH 100V 800MA SOT223 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.8Ohm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 800mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 800mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.8A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 6A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet