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ZXM66P03N8TA

MOSFET 30V P-Chnl HDMOS


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXM66P03N8TA
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 619
  • Description: MOSFET 30V P-Chnl HDMOS (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 6.25A Ta
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time 16.3ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 39.6 ns
Turn-Off Delay Time 94.6 ns
Continuous Drain Current (ID) 7.9A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.25A
Drain to Source Breakdown Voltage -30V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -7.9A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.56W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1979pF @ 25V
See Relate Datesheet