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ZXMN20B28KTC

MOSFET N-CH 200V 1.5A DPAK


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMN20B28KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 105
  • Description: MOSFET N-CH 200V 1.5A DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 2.75A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 358pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 5V
Rise Time 76.9ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 57.1 ns
Turn-Off Delay Time 44.7 ns
Continuous Drain Current (ID) 2.3A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.78Ohm
Drain to Source Breakdown Voltage 200V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet