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  • ZXMN3B04N8TA

ZXMN3B04N8TA

MOSFET N-CH 30V 8.9A 8-SOIC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMN3B04N8TA
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 609
  • Description: MOSFET N-CH 30V 8.9A 8-SOIC (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7.6A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 23.1nC @ 4.5V
Rise Time 11.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 16.6 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 8.9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 7.2A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 45A
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet