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ZXMN6A09GTA

DIODES INC. - ZXMN6A09GTA - MOSFET, N, SOT-223


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMN6A09GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 543
  • Description: DIODES INC. - ZXMN6A09GTA - MOSFET, N, SOT-223 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 40mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.8A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 4.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 24.2nC @ 5V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 25.3 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
See Relate Datesheet