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ZXT12N20DXTA

Bipolar Transistors - BJT Dual 20V NPN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXT12N20DXTA
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: PDF
  • Stock: 154
  • Description: Bipolar Transistors - BJT Dual 20V NPN (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Weight 139.989945mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3.5A
Frequency 112MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT12N20D
Pin Count 8
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 1.25W
Power - Max 1.04W
Transistor Application SWITCHING
Gain Bandwidth Product 112MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 50mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 112MHz
Collector Emitter Saturation Voltage 160mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current 3.5A
Height 950μm
Length 3.1mm
Width 3.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet