Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Number of Terminations | ECCN Code | RoHS Status | Additional Feature | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Number of Elements | Configuration | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Transistor Application | DS Breakdown Voltage-Min | FET Technology | Transistor Element Material | Highest Frequency Band |
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PTF10043 | Ericsson | $0.00 |
Min: 1 Mult: 1 |
2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | YES | R-CDFM-F2 | 150°C | FET General Purpose Power | Not Qualified | 1 | SINGLE | SOURCE | N-CHANNEL | 55W | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | L B | ||||||
PTF10153 | Ericsson | $0.00 |
Min: 1 Mult: 1 |
2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | ENHANCEMENT MODE | e0 | Tin/Lead (Sn/Pb) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | YES | R-CDFM-F2 | 200°C | FET General Purpose Power | Not Qualified | 1 | SINGLE | SOURCE | N-CHANNEL | 237W | AMPLIFIER | 65V | METAL-OXIDE SEMICONDUCTOR | SILICON | L B |
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