Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Material | Packaging | Pbfree Code | Part Status | ECCN Code | RoHS Status | Reach Compliance Code | Number of Drivers | Technology | Type | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Frequency Range | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Number of Elements | Configuration | Number of Outputs | Case Connection | Switch Type | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Number of Switches | Number of Terminals | Transistor Application | Transistor Element Material | Collector-Emitter Voltage-Max | Number of Segments | Turn On Time | Turn Off Time-Nom (toff) | Gate-Emitter Voltage-Max | VCEsat-Max | Special Feature | Power Supply Type |
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BAS7004WE6327XT | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Si | Tape and Reel | Obsolete | RoHS Compliant | Schottky Diode | 3 | Dual Series | ||||||||||||||||||||||||||||||||||||||
AUIRS2016S | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Tube | Obsolete | RoHS Compliant | 1 | IGBT|MOSFET | 8 | 1 | Shutdown | |||||||||||||||||||||||||||||||||||||
30CLJQ150SCV | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Active | RoHS non-compliant | Schottky Diode | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||
BGS 12AL7-4 E6327 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Obsolete | RoHS Compliant | CMOS/TTL | 7 | SPDT | 1 | |||||||||||||||||||||||||||||||||||||||
BAV199B6327XT | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Si | Tape and Reel | Unconfirmed | RoHS Compliant | Switching Diode | 3 | Dual Series | ||||||||||||||||||||||||||||||||||||||
BGA 925L6 E6327 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Tape and Reel | Obsolete | RoHS Compliant | 6 | Single | ||||||||||||||||||||||||||||||||||||||||
RIC7113E4 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Obsolete | RoHS non-compliant | 2 | IGBT|MOSFET | 18 | 2 | Under Voltage Lockout | ||||||||||||||||||||||||||||||||||||||
TLE4241GMFUMA1 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Obsolete | RoHS Compliant | 8 | 3 | |||||||||||||||||||||||||||||||||||||||||
FD300R12KE3 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 5 | NO | R-XUFM-X5 | 150°C | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 480A | 5 | SILICON | 1200V | 400 ns | 830 ns | |||||||||||||||||||||||
FF100R12KS4 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | NO | R-XUFM-X7 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 780W | 150A | 7 | SILICON | 1200V | 180 ns | 590 ns | 20V | 3.7 V | |||||||||||||||||||
FF200R12KE3 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | NO | R-XUFM-X7 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1040W | 295A | 7 | SILICON | 1200V | 400 ns | 830 ns | 20V | 2.15 V | |||||||||||||||||||
FF800R12KE3 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree no | EAR99 | Non-RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 | NO | R-XUFM-X10 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 3900W | 1200A | 10 | SILICON | 1200V | 880 ns | 1140 ns | 20V | 2.15 V | |||||||||||||||||||
FP15R12KE3G | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree no | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 24 | NO | R-XUFM-X24 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 7 | COMPLEX | ISOLATED | N-CHANNEL | 100W | 25A | 24 | SILICON | 1200V | 135 ns | 610 ns | 20V | 2.2 V | |||||||||||||||||||
FP25R12KS4C | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree no | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 24 | NO | R-XUFM-X24 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 7 | COMPLEX | ISOLATED | N-CHANNEL | 230W | 40A | 24 | SILICON | 1200V | 110 ns | 460 ns | 20V | 3.7 V | |||||||||||||||||||
FP50R12KS4C | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree no | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | NO | R-XUFM-X35 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 7 | COMPLEX | ISOLATED | N-CHANNEL | 360W | 70A | 35 | SILICON | 1200V | 110 ns | 460 ns | 20V | 3.7 V | |||||||||||||||||||
FZ600R17KE3 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 5 | NO | R-XUFM-X3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 3120W | 840A | 3 | POWER CONTROL | SILICON | 1700V | 400 ns | 1200 ns | 20V | 2.45 V | ||||||||||||||||||
BAS12507WE6327XT | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Si | Tape and Reel | Obsolete | RoHS Compliant | Schottky Diode | 4 | Dual Parallel | ||||||||||||||||||||||||||||||||||||||
BAR64-04WE6327 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Tape and Reel | Obsolete | RoHS Compliant | Attenuator|Switch | 3 | UHF|VHF|HF|MF|SHF | Dual Series | ||||||||||||||||||||||||||||||||||||||
SIDC50D60C6ZJ | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Unconfirmed | Supplier Unconfirmed | Switching Diode | 2 | Single | ||||||||||||||||||||||||||||||||||||||||
30SCLJQ045SCX | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Active | RoHS non-compliant | Schottky Diode | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||
HFB35HB20C | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Active | RoHS non-compliant | Switching Diode | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||
BAV 70S H6727 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Si | Tape and Reel | LTB | RoHS Compliant | Switching Diode | 6 | Double Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||
BAR5002VE6327XT | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Tape and Reel | Obsolete | RoHS Compliant | Attenuator|Switch | 2 | UHF|VHF|HF|SHF | Single | ||||||||||||||||||||||||||||||||||||||
BAT 64-04W E6327 | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Si | Tape and Reel | Obsolete | RoHS Compliant | Schottky Diode | 3 | Dual Series | ||||||||||||||||||||||||||||||||||||||
IR2153Z | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Obsolete | RoHS non-compliant | 2 | IGBT|MOSFET | 8 | 2 | Under Voltage Lockout | ||||||||||||||||||||||||||||||||||||||
BGA428L6327XT | Infineon Technologies AG | $0.00 |
Min: 1 Mult: 1 |
download | Tape and Reel | Obsolete | RoHS Compliant | 6 | Single |
Products