Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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AUIRFS4310ZTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W | 20 ns | 250W Tc | 120A | SWITCHING | 0.006Ohm | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 120A Tc | 560A | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 26 ns | 100V | 250W Tc | 120A | SWITCHING | 0.0027Ohm | 52 ns | SILICON | N-Channel | 2.7m Ω @ 100A, 10V | 3.8V @ 184μA | 10300pF @ 50V | 139nC @ 10V | 15ns | 17 ns | 20V | 100V | 120A Tc | 480A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLML9301TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 64MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRLML9301TRPBF | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 1.3W | 9.6 ns | -2.4V | 1.3W Ta | 21 ns | -3.6A | 150°C | SWITCHING | 16 ns | SILICON | P-Channel | 64m Ω @ 3.6A, 10V | 2.4V @ 10μA | 388pF @ 25V | 4.8nC @ 4.5V | 19ns | 15 ns | 20V | -30V | -1.3 V | 3.6A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
BSC13DN30NSFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | SWITCHING | 0.13Ohm | 300V | SILICON | N-Channel | 130m Ω @ 16A, 10V | 4V @ 90μA | 2450pF @ 150V | 30nC @ 10V | 16A | 16A Tc | 300V | 64A | 56 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC059N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 50W | 5.6 ns | 40V | 2.5W Ta 50W Tc | 73A | SWITCHING | 0.0059Ohm | 23 ns | SILICON | N-Channel | 5.9m Ω @ 50A, 10V | 2V @ 23μA | 3200pF @ 20V | 40nC @ 10V | 3.4ns | 3.8 ns | 20V | 16A | 16A Ta 73A Tc | 292A | 25 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSZ034N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.1W Ta 52W Tc | 40A | SWITCHING | 0.0046Ohm | SILICON | N-Channel | 3.4m Ω @ 20A, 10V | 2V @ 250μA | 1800pF @ 20V | 25nC @ 10V | 4ns | 20V | 19A | 19A Ta 40A Tc | 160A | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSC265N10LSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 1.85V | 100V | 78W Tc | 40A | SWITCHING | 0.0265Ohm | SILICON | N-Channel | 26.5m Ω @ 20A, 10V | 2.4V @ 43μA | 1600pF @ 50V | 21nC @ 10V | 24ns | 20V | 6.5A | 6.5A Ta 40A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSZ42DN25NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 250V | 33.8W Tc | 5A | SWITCHING | 0.425Ohm | 8 ns | SILICON | N-Channel | 425m Ω @ 2.5A, 10V | 4V @ 13μA | 430pF @ 100V | 5.5nC @ 10V | 2ns | 20V | 5A | 5A Tc | 20A | 40 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFR5410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -13A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 205mOhm | Surface Mount | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 66W | 15 ns | -4V | 66W Tc | 190 ns | -13A | 150°C | SWITCHING | 45 ns | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 46 ns | 20V | -100V | -100V | -4 V | 13A Tc | 100V | 52A | 10V | ±20V | |||||||||||||||||||||||
IRLR7843TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | 161A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.2606mm | 6.22mm | 3.3MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 25 ns | 2.3V | 140W Tc | 59 ns | 161A | SWITCHING | 34 ns | SILICON | N-Channel | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 42ns | 19 ns | 20V | 30V | 2.3 V | 161A Tc | 620A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
IRFR5305TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.065Ohm | 55V | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 31A | 31A Tc | 55V | 110A | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD80R4K5P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 13W Tc | 1.5A | SWITCHING | 800V | SILICON | N-Channel | 4.5 Ω @ 400mA, 10V | 3.5V @ 200μA | 80pF @ 500V | 4nC @ 10V | Super Junction | 1.5A Tc | 800V | 2.6A | 1 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFH9310TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 2 (1 Year) | 3 | EAR99 | 6mm | ROHS3 Compliant | No | 8 | 8-PowerVDFN | No SVHC | 950μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N3 | Other Transistors | 1 | DRAIN | Single | 3.1W | 25 ns | -1.9V | 3.1W Ta | 21A | SWITCHING | 0.0046Ohm | 65 ns | SILICON | P-Channel | 4.6m Ω @ 21A, 10V | 2.4V @ 100μA | 5250pF @ 15V | 58nC @ 4.5V | 47ns | 70 ns | 20V | -30V | -1.9 V | 40A | 21A Ta 40A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFR812TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.2Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 78W | 14 ns | 78W Tc | 3.6A | SWITCHING | 24 ns | SILICON | N-Channel | 2.2 Ω @ 2.2A, 10V | 5V @ 250μA | 810pF @ 25V | 20nC @ 10V | 22ns | 17 ns | 20V | 500V | 3.6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRLR120NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 48W Tc | SWITCHING | 0.225Ohm | 100V | SILICON | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 10A | 10A Tc | 100V | 35A | 85 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
BSF035NE2LQXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.2W Ta 28W Tc | 69A | SWITCHING | 0.0046Ohm | SILICON | N-Channel | 3.5m Ω @ 30A, 10V | 2V @ 250μA | 1862pF @ 12V | 25nC @ 10V | 25V | 22A | 22A Ta 69A Tc | 276A | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD25N06S240ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.04Ohm | 55V | SILICON | N-Channel | 40m Ω @ 13A, 10V | 4V @ 26μA | 513pF @ 25V | 18nC @ 10V | 29A | 29A Tc | 55V | 116A | 80 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFH8325TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 12 ns | 3.6W Ta 54W Tc | 21A | SWITCHING | 0.005Ohm | 14 ns | SILICON | N-Channel | 5m Ω @ 20A, 10V | 2.35V @ 50μA | 2487pF @ 10V | 32nC @ 10V | 16ns | 7.1 ns | 20V | 30V | 21A Ta 82A Tc | 94 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFZ34NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 29A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 40mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 68W | 7 ns | 4V | 3.8W Ta 68W Tc | 86 ns | 29A | SWITCHING | 31 ns | SILICON | N-Channel | 40m Ω @ 16A, 10V | 4V @ 250μA | 700pF @ 25V | 34nC @ 10V | 49ns | 40 ns | 20V | 55V | 55V | 4 V | 29A Tc | 10V | ±20V | |||||||||||||||||||||||||||
IPB80N03S4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 94W Tc | 37 ns | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 2.2V @ 45μA | 5100pF @ 25V | 75nC @ 10V | 6ns | 80A | 80A Tc | 95 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
IRF530NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 17A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 90MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 3.8W | 9.2 ns | 4V | 3.8W Ta 70W Tc | 140 ns | 17A | 175°C | SWITCHING | 35 ns | SILICON | N-Channel | 90m Ω @ 9A, 10V | 4V @ 250μA | 920pF @ 25V | 37nC @ 10V | 22ns | 25 ns | 20V | 100V | 100V | 4 V | 17A Tc | 60A | 10V | ±20V | |||||||||||||||||||||||||
IPB70N04S406ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 8 ns | 40V | 58W Tc | 70A | 0.0062Ohm | 7 ns | SILICON | N-Channel | 6.2m Ω @ 70A, 10V | 4V @ 26μA | 2550pF @ 25V | 32nC @ 10V | 10ns | 9 ns | 20V | 70A Tc | 280A | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFZ44ZSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 13.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 80W Tc | 51A | SWITCHING | 33 ns | SILICON | N-Channel | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 1420pF @ 25V | 43nC @ 10V | 68ns | 41 ns | 20V | 55V | 51A Tc | 200A | 86 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPD50R380CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 2014 | CoolMOS™ | no | Discontinued | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | 3 | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 73W Tc | SWITCHING | 0.38Ohm | 500V | SILICON | N-Channel | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 584pF @ 100V | 24.8nC @ 10V | Super Junction | 14.1A | 9.9A Tc | 500V | 32.4A | 173 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPB083N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 18 ns | 100V | 125W Tc | 80A | SWITCHING | 31 ns | SILICON | N-Channel | 8.3m Ω @ 73A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 42ns | 8 ns | 20V | 80A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPB042N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 79W | 30V | 79W Tc | 70A | SWITCHING | 0.006Ohm | SILICON | N-Channel | 4.2m Ω @ 30A, 10V | 2.2V @ 250μA | 3900pF @ 15V | 38nC @ 10V | 20V | 70A Tc | 400A | 60 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
AUIRLR3410TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W | 7.2 ns | 79W Tc | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 17A Tc | 60A | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
BSC190N12NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 17 ns | 120V | 69W Tc | 8.6A | SWITCHING | 22 ns | SILICON | N-Channel | 19m Ω @ 39A, 10V | 4V @ 42μA | 2300pF @ 60V | 34nC @ 10V | 16ns | 4 ns | 20V | 8.6A Ta 44A Tc | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSC011N03LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 30V | 2.5W Ta 96W Tc | 37A | SWITCHING | SILICON | N-Channel | 1.1m Ω @ 30A, 10V | 2V @ 250μA | 4300pF @ 15V | 68nC @ 10V | 9.2ns | 20V | 37A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFS7440TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 2.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 208W | 24 ns | 3V | 208W Tc | 120A | SWITCHING | 115 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 68ns | 68 ns | 20V | 40V | 3 V | 208A | 120A Tc | 772A | 6V 10V | ±20V |
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