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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Min Supply Voltage | Frequency | Height | Width | Thickness | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | Current | HTS Code | Number of Functions | Nominal Supply Current | Nominal Input Voltage | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Gain | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Max Output Current | Case Connection | Halogen Free | Output Current per Channel | Characteristic Impedance | Construction | RF/Microwave Device Type | Test Frequency | Data Rate | Element Configuration | Current - Output | Power Dissipation | Turn On Delay Time | Interface IC Type | Driver Number of Bits | Built-in Protections | Watchdog Timer | Threshold Voltage | Output Current Flow Direction | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Core Architecture | Speed | Power Dissipation-Max | Load Current | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Noise Figure | Input Capacitance | Frequency (Max) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Number of Segments | Screening Level | Memory Size | Memory Type | RAM Size | Number of I/O | Address Bus Width | Telecom IC Type | External Data Bus Width | Data Bus Width | Number of Programmable I/O | Topology | Output Peak Current Limit-Nom | Number of Timers/Counters | uPs/uCs/Peripheral ICs Type | Multiplexed Display Capability | Clock Frequency | Bit Size | Has ADC | DMA Channels | PWM Channels | DAC Channels | ROM Programmability | P1dB | Current - Transmitting | ROM (words) | RAM (bytes) | CPU Family |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SAB-C509-LM | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
100 | 20mm | Non-RoHS Compliant | 14mm | CMOS | 3.4mm | 8542.31.00.01 | e0 | Tin/Lead (Sn/Pb) | QUAD | GULL WING | NOT SPECIFIED | 5V | NOT SPECIFIED | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 4.75V | 70°C | Microcontrollers | Not Qualified | 5V | 5.5V | 16 MHz | 79 | 16 | 8 | MICROCONTROLLER | 16MHz | 8 | YES | NO | YES | NO | MROM | 512 | 3328 | 8051 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMA7110 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | yes | 3 | 38 | SMD/SMT | 85°C | -40°C | 9.7mm | RoHS Compliant | 38 | TSSOP | I2C, SPI | 3.6V | No SVHC | 1.9V | 915MHz | CMOS | 1.2mm | DUAL | GULL WING | NOT SPECIFIED | 3V | NOT SPECIFIED | 38 | INDUSTRIAL | YES | 0.5mm | Microcontrollers | Not Qualified | 2.5/3.3V | Halogen Free | 32 kbps | Yes | 8051 | 12 MHz | 928MHz | 256B | FLASH | 256kB | 10 | 8b | 10 | 4 | MICROCONTROLLER | 8 | YES | NO | NO | NO | 17.1mA | 256 | 256 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDA5102 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | yes | 3 | 16 | 85°C | -25°C | 3.3V | 5mm | RoHS Compliant | Lead Free | 16 | TSSOP | 915MHz | 4.4mm | BIPOLAR | 1.2mm | 8542.39.00.01 | 1 | 7mA | DUAL | GULL WING | NOT SPECIFIED | 3V | NOT SPECIFIED | 16 | OTHER | YES | Other Telecom ICs | Not Qualified | 2.1/4V | Halogen Free | 20 kbps | TELECOM CIRCUIT | 7mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCR402WH6327XT | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Cut Tape | 1 | 4 | EAR99 | 18V | 2mm | RoHS Compliant | No | 4 | SOT-343 | 1.25mm | 1mm | 1 | e3 | Tin (Sn) | DUAL | GULL WING | 10V | YES | 1.3mm | LED DISPLAY DRIVER | 500mW | 1 | NO | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP000011213 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP000011305 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KITLEDBCRSAMPLESTOBO1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTMA080152MV1R500AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | yes | RoHS Compliant | No | 20 | 700MHz | 30 dB | WIDE BAND HIGH POWER | 940MHz | 91W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3205 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 200W | 14 ns | 2V | 200W Tc | 75A | 50 ns | N-Channel | 8m Ω @ 62A, 10V | 4V @ 250μA | 3247pF @ 25V | 146nC @ 10V | 101ns | 65 ns | 20V | 55V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R165CPFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 192W Tc | SWITCHING | 0.165Ohm | 600V | SILICON | N-Channel | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 2000pF @ 100V | 52nC @ 10V | 21A | 21A Tc | 600V | 61A | 522 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R180C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | TO-220-3 | 20.7mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 68W | 9.3 ns | 600V | 155mOhm | PG-TO220-3-1 | 68W Tc | 13A | 150°C | 50 ns | N-Channel | 180mOhm @ 5.3A, 10V | 4V @ 260μA | 1080pF @ 400V | 24nC @ 10V | 20V | 600V | 13A Tc | 600V | 1.08nF | 10V | ±20V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBA90N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.9982mm | ROHS3 Compliant | Lead Free | 98A | No | 3 | AVALANCHE RATED | TO-273AA | No SVHC | 15.0114mm | 5mm | 23Ohm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | DRAIN | Single | 650W | 23 ns | 5V | 650W Tc | 98A | SWITCHING | 39 ns | SILICON | N-Channel | 23m Ω @ 59A, 10V | 5V @ 250μA | 6080pF @ 25V | 240nC @ 10V | 160ns | 77 ns | 30V | 200V | 200V | 5 V | 95A | 98A Tc | 960 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R280CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 8 ns | 500V | 30.4W Tc | 7.5A | SWITCHING | 0.28Ohm | 40 ns | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | 6.4ns | 7.6 ns | 20V | 7.5A Tc | 42.9A | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7787PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 11 ns | 125W Tc | 76A | 51 ns | N-Channel | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 4020pF @ 25V | 109nC @ 10V | 48ns | 39 ns | 20V | 76A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K4CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 800V | 31W Tc | 3.9A | SWITCHING | SILICON | N-Channel | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 570pF @ 100V | 23nC @ 10V | 3.9A Tc | 12A | 170 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R600P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | 20.7mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 21W | 7 ns | 21W Tc | 6A | 150°C | SWITCHING | 0.6Ohm | 37 ns | SILICON | N-Channel | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 363pF @ 400V | 9nC @ 10V | 20V | 600V | 6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 24W Tc | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 761pF @ 400V | 18nC @ 10V | 12A Tc | 600V | 36A | 38 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA057N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 24 ns | 60V | 38W Tc | 60A | SWITCHING | 0.0057Ohm | 32 ns | SILICON | N-Channel | 5.7m Ω @ 60A, 10V | 4V @ 58μA | 6600pF @ 30V | 82nC @ 10V | 68ns | 9 ns | 20V | 60A Tc | 240A | 77 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7437PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2012 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 1.8MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 230W | 19 ns | 3V | 230W Tc | 195A | SWITCHING | 78 ns | SILICON | N-Channel | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 7330pF @ 25V | 225nC @ 10V | 70ns | 53 ns | 20V | 40V | 3 V | 195A Tc | 802 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R380P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 12 ns | 600V | 342mOhm | PG-TO220-FP | 31W Tc | 10.6A | 33 ns | N-Channel | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 877pF @ 100V | 19nC @ 10V | 6ns | 7 ns | 20V | 10.6A Tc | 600V | 877pF | 10V | ±20V | 380 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB33N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 33A | No | 3 | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 56Ohm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 3.8W | 13 ns | 5.5V | 3.8W Ta 170W Tc | 33A | SWITCHING | 23 ns | SILICON | N-Channel | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 2020pF @ 25V | 90nC @ 10V | 38ns | 21 ns | 30V | 150V | 150V | 5.5 V | 33A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGA420E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 150°C | -65°C | 3V | 2mm | RoHS Compliant | Lead Free | 4 | SOT-343-4 | 100MHz | 1.25mm | 900μm | BIPOLAR | 8mA | 1 | 6.7mA | e3 | Matte Tin (Sn) | 1 | RF/Microwave Amplifiers | 3V | 13 dB | 50Ohm | COMPONENT | NARROW BAND LOW POWER | 1GHz | 90mW | 2.3 dB | -2.5 dBm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS308E3062ANTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS5572E | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | yes | 3 | 36 | RoHS Compliant | 36 | 2MHz | MOS | e3 | MATTE TIN | DUAL | GULL WING | 225 | NOT SPECIFIED | YES | 5 | Peripheral Drivers | Not Qualified | Halogen Free | 5 | AEC-Q100 | Charge Pump | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP000011256 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PTMA080304MV1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
RoHS Compliant | 20 | WIDE BAND HIGH POWER | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BGM7LLMM4L12E6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | RoHS Compliant | Lead Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS5242-2L | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape and Reel | yes | 3 | 12 | EAR99 | 150°C | -40°C | 28V | 6.4mm | RoHS Compliant | No | 12 | SOIC | 28V | No SVHC | 4.5V | 2.35mm | 7.5mm | 19mOhm | MOS | 4mA | 6A | 1 | 3.2mA | 28V | DUAL | GULL WING | 13.5V | 12 | YES | 1mm | 2 | Peripheral Drivers | 9/16V | 28V | 50A | Halogen Free | 6A | 6A | 1.4W | 250 μs | HALF BRIDGE BASED PERIPHERAL DRIVER | 2 | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE | 25mOhm | 1.4W | 6A | 250 μs | 4.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS5241L | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 1 | 12 | EAR99 | 150°C | -40°C | 7.5mm | RoHS Compliant | Contains Lead | No | 12 | 6.4mm | 25mOhm | MOS | 2 | DUAL | GULL WING | 13.5V | 12 | 1mm | 4.5V | Peripheral Drivers | 9/16V | 2 | 40A | 5.5A | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | 2 | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL | SINK | 2W | 0.7A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ILD1151XT | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
14 | EAR99 | 4.9mm | RoHS Compliant | 14 | SSOP | 3.9mm | 1.7mm | 8542.39.00.01 | 1 | DUAL | GULL WING | NOT SPECIFIED | 24V | NOT SPECIFIED | AUTOMOTIVE | YES | 0.65mm | 4.5V | 125°C | -40°C | 45V | LED DISPLAY DRIVER | 8 | NO |