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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Configuration | Diode Type | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Voltage | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Recovery Time | Reverse Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXG100IF1200HF | IXYS | $0.00 |
Min: 1 Mult: 1 |
20 Weeks | X2PT™ | Active | TO-247-3 | Through Hole | Standard | PT | 1200V | 140A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH28N120BD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*28N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 40 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 63 ns | 3.5V @ 15V, 28A | 590 ns | PT | 20V | 1200V | 5V | 960V, 28A, 5 Ω, 15V | 92nC | 150A | 30ns/210ns | 2.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
| FID35-06C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | 5 | HIGH RELIABILITY | i4-Pac™-5 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5 | Insulated Gate BIP Transistors | Not Qualified | 125W | 125W | 1 | ISOLATED | N-CHANNEL | Single | 50 ns | 38A | 600V | 600V | POWER CONTROL | SILICON | 80 ns | 2.4V @ 15V, 25A | 390 ns | NPT | 20V | 5V | 300V, 25A, 10 Ω, 15V | 140nC | 1.1mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR72N60A3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | ISOLATED | N-CHANNEL | Single | 200W | 140 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 600V | 63 ns | 1.45V @ 15V, 60A | 885 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| IXGK72N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 600V | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXXX140N65B4H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2016 | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1200W | 105ns | 1.9V @ 15V, 120A | 650V | 340A | 400V, 100A, 4.7 Ω, 15V | 250nC | 840A | 54ns/270ns | 5.75mJ (on), 2.67mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT24N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2004 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*24N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 24A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.5V | 98 ns | 6V @ 15V, 16A | 275 ns | NPT | 20V | 1700V | 5V | 80ns | 850V, 24A, 10 Ω, 15V | 140nC | 75A | 21ns/336ns | 2.97mJ (on), 790μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IXA30RG1200DHG-TUB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | 9-SMD Module | Surface Mount | -55°C~150°C TJ | Standard | 147W | 2.1V @ 15V, 25A | 1200V | 43A | 600V, 25A, 39 Ω, 15V | 76nC | 70ns/250ns | 2.5mJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH40N120B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*40N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 380W | 1 | COLLECTOR | N-CHANNEL | Single | 380W | 100ns | 75A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.9V | 79 ns | 3.5V @ 15V, 40A | 770 ns | PT | 20V | 1200V | 5V | 270ns | 960V, 40A, 2 Ω, 15V | 138nC | 200A | 21ns/290ns | 4.5mJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||||
| IXGK35N120BD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-264-3, TO-264AA | unknown | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*35N120 | 3 | Not Qualified | 350W | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 70A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 86 ns | 3.3V @ 15V, 35A | 660 ns | 1200V | 960V, 35A, 5 Ω, 15V | 170nC | 140A | 50ns/180ns | 3.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH120N65B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1360W | 28ns | 1.9V @ 15V, 100A | PT | 650V | 340A | 400V, 50A, 2 Ω, 15V | 250nC | 760A | 30ns/168ns | 1.34mJ (on), 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX72N60A3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 6.6nF | 1.35V | 63 ns | 1.35V @ 15V, 60A | 885 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| IXGX320N60A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 1kW | 1000W | 1 | COLLECTOR | N-CHANNEL | Single | 1kW | 320A | 600V | 600V | POWER CONTROL | SILICON | 1.05V | 139 ns | 1.25V @ 15V, 100A | 1870 ns | PT | 20V | 5V | 560nC | 700A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1X100N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 21 | ROHS3 Compliant | AVALANCHE RATED | 24-PowerSMD, 21 Leads | Surface Mount | -55°C~150°C TJ | Standard | DUAL | GULL WING | IXX*N60 | R-PDSO-G21 | Insulated Gate BIP Transistors | 250W | 400W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 140 ns | 105A | 600V | 1.8V | POWER CONTROL | SILICON | 92 ns | 1.8V @ 15V, 70A | 350 ns | 20V | 145A | 5.5V | 360V, 70A, 2 Ω, 15V | 143nC | 440A | 30ns/120ns | 1.9mJ (on), 2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYR100N65A3V1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | Active | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK82N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 260A | 1.2kV | 2.05V | POWER CONTROL | SILICON | 109 ns | 2.05V @ 15V, 82A | 1590 ns | PT | 20V | 1200V | 5V | 600V, 80A, 2 Ω, 15V | 340nC | 580A | 34ns/265ns | 5.5mJ (on), 12.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| IXYH120N65C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1360W | 29ns | 2.8V @ 15V, 100A | PT | 650V | 260A | 400V, 50A, 2 Ω, 15V | 265nC | 620A | 28ns/127ns | 1.25mJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR40N120A2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | ISOPLUS247™ | Through Hole | Standard | IXG*40N120 | 1.2kV | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXK200N60B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1.63kW | 1630W | 1 | COLLECTOR | N-CHANNEL | Single | 1.63kW | 380A | 600V | 1.7V | POWER CONTROL | SILICON | 1.4V | 140 ns | 1.7V @ 15V, 100A | 395 ns | PT | 20V | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT64N60B3-TRL | IXYS | $0.00 |
Min: 1 Mult: 1 |
26 Weeks | GenX3™ | Active | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | 460W | 41ns | 1.8V @ 15V, 50A | PT | 600V | 64A | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGR6N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2010 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 247 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 50W | 50W | 1 | ISOLATED | N-CHANNEL | Single | 5.5A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 91 ns | 7V @ 15V, 3A | 271 ns | 20V | 1700V | 5V | 65ns | 850V, 6A, 33 Ω, 15V | 18.5nC | 18A | 46ns/220ns | 590μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGA30N60C3C1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | unknown | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 220W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 220W | 60A | 600V | 3V | POWER CONTROL | SILICON | 2.6V | 37 ns | 3V @ 15V, 20A | 160 ns | PT | 20V | 5.5V | 300V, 20A, 5 Ω, 15V | 38nC | 150A | 17ns/42ns | 120μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
| IXGR72N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
1 Weeks | GenX3™ | Active | ISOPLUS247™ | compliant | Through Hole | -55°C~150°C TJ | Standard | 200W | 37ns | 2.7V @ 15V, 50A | PT | 600V | 80A | 480V, 50A, 2 Ω, 15V | 175nC | 400A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH8N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™ | Active | Not Applicable | TO-247-3 Variant | compliant | Through Hole | -55°C~175°C TJ | Standard | 280W | 5ns | 4V @ 15V, 8A | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK72N60C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | IXG*72N60 | TO-264 (IXGK) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX82N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 260A | 1.2kV | 2.05V | POWER CONTROL | SILICON | 109 ns | 2.05V @ 15V, 82A | 1590 ns | PT | 20V | 1200V | 5V | 600V, 80A, 2 Ω, 15V | 340nC | 580A | 34ns/265ns | 5.5mJ (on), 12.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MDD200-14N1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Bulk | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | UL RECOGNIZED | Y4-M6 | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MDD200 | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | HIGH POWER | 1 | 9700A | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1400V | 1.3V @ 300A | 1.4kV | 224A | 11.2kA | 1 Pair Series Connection | 1400V | 1.4kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MEA95-06DA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Bulk | 2000 | Active | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 3 | TO-240AA | Chassis Mount | MEA | Standard | 2.09V | Common Anode | TO-240AA | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 600V | 1.55V @ 100A | 600V | 95A | 1.3kA | 1 Pair Common Anode | 1.2kA | 600V | 95A | 300 ns | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDD200-18N1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Bulk | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 3 | UL RECOGNIZED | Y4-M6 | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MDD200 | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | HIGH POWER | 1 | 9700A | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1800V | 1.3V @ 300A | 1.8kV | 224A | 11.2kA | 1 Pair Series Connection | 1800V | 1.8kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MEK600-04DA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Chassis Mount, Screw | Bulk | 2001 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE | Y4-M6 | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MEK | Not Qualified | SILICON | 2 | Standard | 1 | 1.4V | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 6mA @ 400V | 1.4V @ 400A | 400V | 880A | 6mA | 400V | 1 Pair Common Cathode | 220 ns | 400V |