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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IXFH10N80P IXFH10N80P IXYS $0.00
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download 30 Weeks Through Hole Tube 2009 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 TO-247AA DRAIN Single 300W 300W Tc 10A SWITCHING 62 ns SILICON N-Channel 1.1 Ω @ 5A, 10V 5.5V @ 2.5mA 2050pF @ 25V 40nC @ 10V 22ns 22 ns 30V 800V 10A Tc 30A 600 mJ 10V ±30V
IXTA110N12T2 IXTA110N12T2 IXYS $0.00
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download 10 Weeks Tube 2017 TrenchT2™ Obsolete 1 (Unlimited) Non-RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 517W Tc N-Channel 14m Ω @ 55A, 10V 4.5V @ 250μA 6570pF @ 25V 120nC @ 10V 110A Tc 120V 10V ±20V
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download 24 Weeks Surface Mount Tube 2009 Linear L2™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR DRAIN 400W Tc 75A AMPLIFIER 0.021Ohm 100V SILICON N-Channel 21m Ω @ 500mA, 10V 4.5V @ 250μA 8100pF @ 25V 215nC @ 10V 75A Tc 100V 225A 2500 mJ 10V ±20V
IXTA15N50L2 IXTA15N50L2 IXYS $0.00
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IXFL210N30P3 IXFL210N30P3 IXYS $0.00
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FMD15-06KC5 FMD15-06KC5 IXYS $0.00
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IXTQ69N30P IXTQ69N30P IXYS $0.00
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download 24 Weeks Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Pure Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 500W 500W Tc 69A SWITCHING 0.049Ohm 75 ns SILICON N-Channel 49m Ω @ 500mA, 10V 5V @ 250μA 4960pF @ 25V 180nC @ 10V 25ns 27 ns 20V 300V 69A Tc 200A 1500 mJ 10V ±20V
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download 26 Weeks Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 250W Tc 6A SWITCHING 0.0024Ohm 1200V SILICON N-Channel 2.4 Ω @ 500mA, 10V 5V @ 1mA 2830pF @ 25V 92nC @ 10V 6A 6A Tc 1200V 18A 10V ±30V
IXTT24P20 IXTT24P20 IXYS $0.00
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download Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 DRAIN Single 600W 600W Tc 88A SWITCHING 0.04Ohm 96 ns SILICON N-Channel 40m Ω @ 44A, 10V 5V @ 250μA 6300pF @ 25V 180nC @ 10V 24ns 25 ns 20V 300V 88A Tc 220A 2000 mJ 10V ±20V
IXFT400N075T2 IXFT400N075T2 IXYS $0.00
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download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 16.13mm ROHS3 Compliant 247 AVALANCHE RATED ISOPLUS247™ 21.34mm 5.21mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 ISOLATED Single 300W 30 ns 300W Tc 20A SWITCHING 0.29Ohm 85 ns SILICON N-Channel 290m Ω @ 16A, 10V 5V @ 8mA 8800pF @ 25V 150nC @ 10V 24ns 24 ns 30V 800V 20A Tc 70A 1500 mJ 10V ±30V
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download 30 Weeks Surface Mount Tube 2011 HiPerFET™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 3Ohm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 4 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 150W 150W Tc 4A SWITCHING 32 ns SILICON N-Channel 3 Ω @ 2A, 10V 4.5V @ 1.5mA 1050pF @ 25V 39nC @ 10V 15ns 18 ns 20V 1kV 4A 4A Tc 1000V 700 mJ 10V ±20V
IXTA64N10L2 IXTA64N10L2 IXYS $0.00
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download 28 Weeks Tube 2013 Linear L2™ Active 1 (Unlimited) 10.41mm ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.83mm 9.65mm Surface Mount 1.946308g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 1 14 ns 357W Tc 64A 38 ns N-Channel 32m Ω @ 500mA, 10V 4.5V @ 250μA 3620pF @ 25V 100nC @ 10V 27ns 11 ns 20V 64A Tc 100V 10V ±30V
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download 28 Weeks Chassis Mount Tube 2009 Linear L2™ yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC 33MOhm Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE Nickel (Ni) UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power Not Qualified 1 ISOLATED Single 735W 735W Tc 90A SWITCHING SILICON N-Channel 33m Ω @ 500mA, 10V 4.5V @ 3mA 23000pF @ 25V 640nC @ 10V 20V 250V 90A Tc 360A 3000 mJ 10V ±20V
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download 19 Weeks Through Hole Tube 2015 HiPerFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-247-3 not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 390W Tc 22A N-Channel 160m Ω @ 11A, 10V 5.5V @ 1.5mA 2310pF @ 25V 38nC @ 10V 22A Tc 650V 10V ±30V
IXTQ110N10P IXTQ110N10P IXYS $0.00
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download 24 Weeks Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 480W 480W Tc 110A SWITCHING 0.015Ohm 65 ns SILICON N-Channel 15m Ω @ 500mA, 10V 5V @ 250μA 3550pF @ 25V 110nC @ 10V 25ns 25 ns 20V 100V 110A Tc 250A 1000 mJ 10V ±20V
IXFT320N10T2 IXFT320N10T2 IXYS $0.00
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download 26 Weeks Surface Mount Tube 2012 GigaMOS™, HiPerFET™, TrenchT2™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1000W Tc 320A SWITCHING 100V SILICON N-Channel 3.5m Ω @ 100A, 10V 4V @ 250μA 26000pF @ 25V 430nC @ 10V 320A Tc 100V 800A 1500 mJ 10V ±20V
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download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1250W Tc 220A SWITCHING 0.009Ohm 150V SILICON N-Channel 9m Ω @ 500mA, 10V 4.5V @ 8mA 15400pF @ 25V 162nC @ 10V 220A Tc 150V 600A 3000 mJ 10V ±20V
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download 30 Weeks Through Hole Tube 2012 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 ISOLATED Single 230W 230W Tc 9A SWITCHING 66 ns SILICON N-Channel 1.04 Ω @ 8A, 10V 6.5V @ 1mA 6900pF @ 25V 120nC @ 10V 28ns 35 ns 30V 1.2kV 9A 9A Tc 1200V 800 mJ 10V ±30V
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download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 247 AVALANCHE RATED, UL RECOGNIZED ISOPLUS247™ Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 ISOLATED Single 300W 300W Tc 21A SWITCHING 0.23Ohm 77 ns SILICON N-Channel 230m Ω @ 20A, 10V 6.5V @ 1mA 14000pF @ 25V 230nC @ 10V 50ns 46 ns 900V 21A Tc 80A 1500 mJ 10V ±30V
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download 30 Weeks Chassis Mount Tube 2010 GigaMOS™ HiPerFET™ yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC unknown Chassis Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NICKEL UPPER UNSPECIFIED NOT SPECIFIED NOT SPECIFIED 4 R-PUFM-X4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE ISOLATED 690W Tc 120A SWITCHING 0.017Ohm 250V SILICON N-Channel 17m Ω @ 60A, 10V 5V @ 4mA 19000pF @ 25V 255nC @ 10V 120A Tc 250V 400A 3000 mJ 10V ±20V
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