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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Reverse Recovery Time | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFA130N10T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 360W Tc | 130A | SWITCHING | 0.0091Ohm | 100V | SILICON | N-Channel | 9.1m Ω @ 65A, 10V | 4.5V @ 1mA | 6600pF @ 25V | 130nC @ 10V | 130A Tc | 100V | 300A | 800 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP1R4N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2012 | Polar™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 3 | R-PSFM-T3 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 86W | 86W Tc | 1.4A | SWITCHING | 78 ns | SILICON | N-Channel | 13 Ω @ 500mA, 10V | 4.5V @ 100μA | 666pF @ 25V | 24.8nC @ 10V | 27ns | 29 ns | 20V | 1.2kV | 1.4A Tc | 1200V | 3A | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFH10N80P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | TO-247AA | DRAIN | Single | 300W | 300W Tc | 10A | SWITCHING | 62 ns | SILICON | N-Channel | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 2050pF @ 25V | 40nC @ 10V | 22ns | 22 ns | 30V | 800V | 10A Tc | 30A | 600 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTA110N12T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tube | 2017 | TrenchT2™ | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 517W Tc | N-Channel | 14m Ω @ 55A, 10V | 4.5V @ 250μA | 6570pF @ 25V | 120nC @ 10V | 110A Tc | 120V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT75N10L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2009 | Linear L2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | 400W Tc | 75A | AMPLIFIER | 0.021Ohm | 100V | SILICON | N-Channel | 21m Ω @ 500mA, 10V | 4.5V @ 250μA | 8100pF @ 25V | 215nC @ 10V | 75A Tc | 100V | 225A | 2500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA15N50L2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Surface Mount | Tube | 2011 | Linear L2™ | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 15A | 0.48Ohm | 500V | SILICON | N-Channel | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 4080pF @ 25V | 123nC @ 10V | 15A Tc | 500V | 35A | 750 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFL210N30P3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2012 | HiPerFET™, Polar3™ | Active | 1 (Unlimited) | 20.29mm | ROHS3 Compliant | 264 | ISOPLUS264™ | unknown | 26.42mm | 5.31mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | Single | 46 ns | 520W Tc | 108A | 94 ns | N-Channel | 16m Ω @ 105A, 10V | 5V @ 8mA | 16200pF @ 25V | 268nC @ 10V | 20V | 108A Tc | 300V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FMD15-06KC5 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | 2009 | CoolMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | HIGH RELIABILITY, UL RECOGNIZED | ISOPLUSi5-Pak™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 5 | R-PSIP-T5 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 15A | SWITCHING | 0.165Ohm | 600V | SILICON | N-Channel | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 2000pF @ 100V | 52nC @ 10V | 15A Tc | 600V | 522 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTQ69N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 500W | 500W Tc | 69A | SWITCHING | 0.049Ohm | 75 ns | SILICON | N-Channel | 49m Ω @ 500mA, 10V | 5V @ 250μA | 4960pF @ 25V | 180nC @ 10V | 25ns | 27 ns | 20V | 300V | 69A Tc | 200A | 1500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFP6N120P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 250W Tc | 6A | SWITCHING | 0.0024Ohm | 1200V | SILICON | N-Channel | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 2830pF @ 25V | 92nC @ 10V | 6A | 6A Tc | 1200V | 18A | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTT24P20 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | 110MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 24A | SWITCHING | 68 ns | SILICON | P-Channel | 110m Ω @ 500mA, 10V | 5V @ 250μA | 4200pF @ 25V | 150nC @ 10V | 29ns | 28 ns | 20V | -200V | 24A Tc | 200V | 96A | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | No SVHC | 27MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 600W | 5V | 600W Tc | 100A | SWITCHING | 100 ns | SILICON | N-Channel | 24m Ω @ 50A, 10V | 5V @ 250μA | 6300pF @ 25V | 185nC @ 10V | 26ns | 28 ns | 20V | 250V | 100A Tc | 250A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH120N20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 21.46mm | 5.3mm | 22MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-247AD | DRAIN | Single | 714W | 30 ns | 5V | 714W Tc | 120A | SWITCHING | 100 ns | SILICON | N-Channel | 22m Ω @ 500mA, 10V | 5V @ 4mA | 6000pF @ 25V | 152nC @ 10V | 35ns | 31 ns | 20V | 200V | 120A Tc | 2000 mJ | 10V | ±20V | ||||||||||||||||||||||||
| IXFX180N15P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 11MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 830W | 830W Tc | 180A | SWITCHING | 150 ns | SILICON | N-Channel | 11m Ω @ 90A, 10V | 5V @ 4mA | 7000pF @ 25V | 240nC @ 10V | 32ns | 36 ns | 20V | 150V | 180A Tc | 4000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR18N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 247 | AVALANCHE RATED, UL RECOGNIZED | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | ISOLATED | Single | 200W | 200W Tc | 10.5A | SWITCHING | 0.66Ohm | SILICON | N-Channel | 660m Ω @ 9A, 10V | 6V @ 1mA | 5230pF @ 25V | 97nC @ 10V | 30V | 900V | 10.5A Tc | 36A | 800 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTK88N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | DRAIN | Single | 600W | 600W Tc | 88A | SWITCHING | 0.04Ohm | 96 ns | SILICON | N-Channel | 40m Ω @ 44A, 10V | 5V @ 250μA | 6300pF @ 25V | 180nC @ 10V | 24ns | 25 ns | 20V | 300V | 88A Tc | 220A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFT400N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1000W Tc | 400A | SWITCHING | 0.0023Ohm | 75V | SILICON | N-Channel | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 24000pF @ 25V | 420nC @ 10V | 400A Tc | 75V | 1000A | 1500 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFR32N80P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2006 | HiPerFET™, PolarHT™ | yes | Active | 1 (Unlimited) | 3 | 16.13mm | ROHS3 Compliant | 247 | AVALANCHE RATED | ISOPLUS247™ | 21.34mm | 5.21mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | ISOLATED | Single | 300W | 30 ns | 300W Tc | 20A | SWITCHING | 0.29Ohm | 85 ns | SILICON | N-Channel | 290m Ω @ 16A, 10V | 5V @ 8mA | 8800pF @ 25V | 150nC @ 10V | 24ns | 24 ns | 30V | 800V | 20A Tc | 70A | 1500 mJ | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFH40N30Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | EAR99 | RoHS Compliant | Lead Free | 40A | 3 | AVALANCHE RATED | TO-247-3 | 80MOhm | Through Hole | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 40A | SWITCHING | 40 ns | SILICON | N-Channel | 80m Ω @ 500mA, 10V | 4V @ 4mA | 3100pF @ 25V | 140nC @ 10V | 35ns | 12 ns | 20V | 300V | 40A Tc | 160A | 1000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFX180N10 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2000 | HiPerFET™ | yes | Obsolete | 3 | EAR99 | RoHS Compliant | Lead Free | 180A | No | 3 | AVALANCHE RATED | TO-247-3 | 8MOhm | Through Hole | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 560W | 560W Tc | 180A | SWITCHING | 140 ns | SILICON | N-Channel | 8m Ω @ 90A, 10V | 4V @ 8mA | 10900pF @ 25V | 390nC @ 10V | 90ns | 65 ns | 20V | 100V | 180A Tc | 720A | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX55N50 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2002 | HiPerFET™ | yes | Obsolete | 3 | RoHS Compliant | Lead Free | 55A | 3 | AVALANCHE RATED | TO-247-3 | 25.66mm | 80MOhm | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 520W | 45 ns | 4.5V | 625W Tc | 55A | 150°C | SWITCHING | 120 ns | SILICON | N-Channel | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 9400pF @ 25V | 330nC @ 10V | 60ns | 45 ns | 20V | 500V | 55A Tc | 220A | 10V | ±20V | ||||||||||||||||||||||||||
| IXTA3N50P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2006 | PolarHV™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | 3A | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Single | 70W | 70W Tc | 3.6A | SWITCHING | 2Ohm | 38 ns | SILICON | N-Channel | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 409pF @ 25V | 9.3nC @ 10V | 15ns | 12 ns | 30V | 500V | 3.6A Tc | 8A | 180 mJ | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTA8N50P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tube | 2006 | PolarHV™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | 8A | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | DRAIN | Single | 150W | 150W Tc | 8A | SWITCHING | 0.8Ohm | 65 ns | SILICON | N-Channel | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 1050pF @ 25V | 20nC @ 10V | 28ns | 23 ns | 30V | 500V | 8A | 8A Tc | 400 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFR24N50Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 35 Weeks | Through Hole | Tube | 2001 | HiPerFET™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | AVALANCHE RATED | ISOPLUS247™ | 230mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | ISOLATED | Single | 250W | 250W Tc | 22A | SWITCHING | 55 ns | SILICON | N-Channel | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 3900pF @ 25V | 95nC @ 10V | 30ns | 16 ns | 20V | 500V | 22A Tc | 96A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTX24N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 560W | 568W Tc | 24A | SWITCHING | 0.4Ohm | 75 ns | SILICON | N-Channel | 400m Ω @ 12A, 10V | 5.5V @ 8mA | 8700pF @ 25V | 267nC @ 10V | 35ns | 21 ns | 20V | 1kV | 24A Tc | 1000V | 96A | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN130N30 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Chassis Mount, Screw | Tube | 2003 | HiPerFET™ | yes | Obsolete | 4 | Screw | EAR99 | RoHS Compliant | Lead Free | 130A | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | No SVHC | 22mOhm | Chassis Mount | 36mg | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 700W | 4V | 250 ns | 700W Tc | 130A | SWITCHING | 130 ns | SILICON | N-Channel | 22m Ω @ 500mA, 10V | 4V @ 8mA | 14500pF @ 25V | 380nC @ 10V | 75ns | 31 ns | 20V | 300V | 300V | 4 V | 130A Tc | 520A | 10V | ±20V | ||||||||||||||||||||||
| IXFK44N60 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2000 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | 19.96mm | ROHS3 Compliant | Lead Free | 44A | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | 26.16mm | 5.13mm | 130MOhm | Through Hole | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 560W | 40 ns | 560W Tc | 44A | SWITCHING | 100 ns | SILICON | N-Channel | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 8900pF @ 25V | 330nC @ 10V | 50ns | 40 ns | 20V | 600V | 44A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFH20N80Q | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2002 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 20A | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | 420mOhm | Through Hole | 6g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | TO-247AD | DRAIN | Single | 360W | 4.5V | 250 ns | 360W Tc | 20A | 74 ns | SILICON | N-Channel | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 5100pF @ 25V | 200nC @ 10V | 27ns | 14 ns | 20V | 800V | 800V | 4.5 V | 20A Tc | 80A | 1500 mJ | 10V | ±20V | |||||||||||||||||||||||
| IXFK24N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | HiPerFET™ | yes | Obsolete | Not Applicable | 3 | 19.96mm | ROHS3 Compliant | Lead Free | 24A | No | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | 26.16mm | 5.13mm | 390MOhm | Through Hole | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 560W | 35 ns | 560W Tc | 24A | SWITCHING | 75 ns | SILICON | N-Channel | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 8700pF @ 25V | 267nC @ 10V | 35ns | 21 ns | 20V | 1kV | 24A Tc | 1000V | 96A | 10V | ±20V | |||||||||||||||||||||||||||
| IXFX44N60 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | HiPerFET™ | yes | Obsolete | 3 | RoHS Compliant | Lead Free | 44A | No | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 560W | 560W Tc | 44A | SWITCHING | 100 ns | SILICON | N-Channel | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 8900pF @ 25V | 330nC @ 10V | 50ns | 40 ns | 20V | 600V | 44A Tc | 10V | ±20V |