Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | Current | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Number of Channels | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Max Power Dissipation | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Feature | Analog IC - Other Type | Case Connection | Data Rate | Applications | Element Configuration | Power Dissipation | Output | Supply Current-Max (Isup) | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | On-State Resistance (Max) | Supplier Device Package | -3db Bandwidth | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Input Voltage (Min) | Input Voltage (Max) | Supply Type | Neg Supply Voltage-Max (Vsup) | Neg Supply Voltage-Min (Vsup) | Switch-on Time-Max | Switch-off Time-Max | Normal Position | Off-state Isolation-Nom | On-state Resistance Match-Nom | Voltage - Supply, Single/Dual (±) | Signal Current-Max | Switch Circuit | Voltage - Supply, Single (V+) | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Dual (V±) |
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MT8812AE1 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | 40 | ROHS3 Compliant | No | 40 | 40-DIP (0.600, 15.24mm) | 14.5V | 4.5V | 65Ohm | Through Hole | 0°C~70°C TA | CMOS | 6.35mm | 1 | e3 | Matte Tin (Sn) | DUAL | 5V | 40 | 2.54mm | 1 | CROSS POINT SWITCH | Telecommunications | SEPARATE OUTPUT | 65Ohm | 45MHz | Single | 95 dB | 5Ohm | 4.5V~13.2V | 8:12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HV20220FG-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Surface Mount | Tray | 2013 | Active | 3 (168 Hours) | 48 | 12V | 7mm | ROHS3 Compliant | No | 48 | ALSO REQUIRES VPP (40V TO VNN +200V) AND VNN (-40V TO -160V) SUPPLY | 48-LQFP | 13.2V | 4.5V | 1.4mm | 7mm | 38Ohm | Surface Mount | 181.692094mg | 0°C~70°C TA | CMOS | 7mA | 10μA | 1 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 40 | HV20220 | 0.5mm | 8 | Multiplexer or Switches | 1W | 8 | SINGLE-ENDED MULTIPLEXER | Ultrasound | 1W | 5 μs | 200V | 40V | 38Ohm | 50MHz | 5 μs | 100V | Dual | 5000ns | 5000ns | NO | 33 dB | 1.35Ohm | 40V~200V ±40V~160V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3312YYP-01 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Tray | 2014 | Active | 4 (72 Hours) | ROHS3 Compliant | 196-BGA | Surface Mount | 12 | Advanced Signal Equalization | 8.5 Gbps | Backplane, Cable Interconnect | 196-BGA | 2.5V | 12:12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HV2904/AHA | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Tray | Active | 3 (168 Hours) | 132 | 12mm | ROHS3 Compliant | 132-TFBGA, CSPBGA | Surface Mount | 0°C~70°C | CMOS | 1.2mm | 16 | BOTTOM | BALL | NOT SPECIFIED | 6V | NOT SPECIFIED | YES | 0.8mm | 4.5V | 32 | Ultrasound | 8mA | -6V | 15Ohm | 50MHz | -100V | 100V | -4.5V | -6.3V | 5ns | 5ns | NO | -70 dB | 10Ohm | 3A | SPST | 1:1 | ±4.5V~6.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HV2631FG-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Surface Mount | Tray | 2009 | Active | 3 (168 Hours) | 48 | 28V | 7mm | ROHS3 Compliant | 48 | 48-LQFP | 5.5V | 3V | 1.4mm | 7mm | 27Ohm | Surface Mount | 181.692094mg | 0°C~70°C TA | CMOS | 50μA | 10μA | 8542.39.00.01 | 2 | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 5V | 40 | HV2631 | 0.5mm | 8 | Multiplexer or Switches | Not Qualified | 3.3/5V | 1.2W | 16 | SINGLE-ENDED MULTIPLEXER | Ultrasound | 1.2W | 5 μs | -220V | 50V | 32Ohm | 50MHz | 5 μs | Dual, Single | 5000ns | 5000ns | NO | 33 dB | 1.6Ohm | 50V~110V ±10V~220V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HV2070/AJA | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
Active | 3 (168 Hours) | 121 | 10mm | RoHS Compliant | 121-TFBGA | compliant | 10mm | Surface Mount | 1.2mm | BOTTOM | BALL | NOT SPECIFIED | 6V | NOT SPECIFIED | COMMERCIAL | YES | 0.8mm | S-XBGA-B121 | 4.5V | 70°C | 32 | 6.3V | Ultrasound | SEPARATE OUTPUT | 20mA | 4.5Ohm | -4.5V | -6.3V | 5000ns | 5000ns | NC | 56 dB | 4.7Ohm | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3340YJJ-01 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | Active | 4 (72 Hours) | Surface Mount | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC7385XYV | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Active | 4 (72 Hours) | 100°C | 0°C | RoHS Compliant | 364 | 2.63V | 1.14V | Surface Mount | 1 Gbps | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3316EV | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | Active | Not Applicable | Surface Mount | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VSC3340YJJ-31 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | Active | 4 (72 Hours) | Surface Mount | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HV214PJ-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Tube | 2013 | Active | 1 (Unlimited) | 28 | 5V | 11.51mm | ROHS3 Compliant | 28 | ALSO REQUIRES VPP (40V TO VNN +250V) AND VNN (-40V TO -210V) SUPPLY | 28-LCC (J-Lead) | 13.2V | 4.5V | 3.68mm | 11.51mm | 22Ohm | Surface Mount | 1.182714g | 0°C~70°C TA | CMOS | 7mA | 4μA | 1 | e3 | Matte Tin (Sn) | QUAD | J BEND | 245 | 5V | 40 | HV214 | 1.27mm | 8 | Multiplexer or Switches | Not Qualified | 1.2W | SINGLE-ENDED MULTIPLEXER | Ultrasound | SEPARATE OUTPUT | 5 μs | 250V | 40V | 55Ohm | 50MHz | 5 μs | 125V | Dual | 5000ns | 5000ns | NO | 60 dB | 40V~250V ±40V~210V | SPST | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DN2470K4-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 3 (168 Hours) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5146mm | 6.1mm | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - annealed | GULL WING | NOT SPECIFIED | NOT SPECIFIED | DN2470 | R-PSSO-G2 | 1 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Single | 2.5W | 30 ns | 2.5W Ta | 170mA | SWITCHING | 45 ns | SILICON | N-Channel | 42 Ω @ 100mA, 0V | 540pF @ 25V | 45ns | 60 ns | 20V | 700V | Depletion Mode | 170mA Tj | 0.5A | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DN3525N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | No | 3 | FAST SWITCHING | TO-243AA | No SVHC | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 40 | 1 | 1 | DRAIN | Single | 1.6W | 20 ns | 1.6W Ta | 360mA | SWITCHING | 6Ohm | 25 ns | SILICON | N-Channel | 6 Ω @ 200mA, 0V | 350pF @ 25V | 25ns | 25 ns | 20V | 250V | Depletion Mode | 360mA Tj | 1A | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
LND150N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | HIGH INPUT IMPEDANCE | TO-226-3, TO-92-3 (TO-226AA) | No SVHC | 5.33mm | 4.19mm | Through Hole | 219.992299mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | BOTTOM | 1 | 1 | Single | 740mW | 90 ns | 740mW Ta | 30mA | SWITCHING | 100 ns | SILICON | N-Channel | 1000 Ω @ 500μA, 0V | 10pF @ 25V | 450ns | 450 ns | 20V | 500V | Depletion Mode | 30mA Tj | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DN3135N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | 3 | LOW THRESHOLD | TO-243AA | No SVHC | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 135A | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | 350V | 1 | DRAIN | Single | 1.3W | 10 ns | 1.3W Ta | 135mA | SWITCHING | 15 ns | SILICON | N-Channel | 35 Ω @ 150mA, 0V | 120pF @ 25V | 15ns | 15 ns | 20V | 350V | Depletion Mode | 135mA Tj | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DN3535N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | HIGH INPUT IMPEDANCE | TO-243AA | No SVHC | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | FLAT | 260 | 40 | 1 | 1 | DRAIN | Single | 1.6W | 15 ns | 1.6W Ta | 230mA | SWITCHING | 20 ns | SILICON | N-Channel | 10 Ω @ 150mA, 0V | 360pF @ 25V | 20ns | 20 ns | 20V | 350V | Depletion Mode | 230mA Tj | 0.5A | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN5325N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Bulk | 2009 | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 5.21mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | 1 | Single | 740mW | 20 ns | 740mW Ta | 215mA | SWITCHING | 7Ohm | 25 ns | N-Channel | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | 15 ns | 20V | 250V | 215mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN2106K1-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Tin | No | 3 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 950μm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | 1 | Single | 360mW | 3 ns | 360mW Tc | 280mA | SWITCHING | 6 ns | SILICON | N-Channel | 2.5 Ω @ 500mA, 10V | 2V @ 1mA | 50pF @ 25V | 5ns | 5 ns | 20V | 60V | 0.28A | 280mA Tj | 8 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN2130K1-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | TO-236-3, SC-59, SOT-23-3 | 950μm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | 1 | Single | 360mW | 10 ns | 360mW Tc | 85mA | SWITCHING | 12 ns | SILICON | N-Channel | 25 Ω @ 120mA, 4.5V | 2.4V @ 1mA | 50pF @ 25V | 7ns | 7 ns | 20V | 300V | 0.085A | 85mA Tj | 5 pF | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN5335K1-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Tin | 3 | TO-236-3, SC-59, SOT-23-3 | 950μm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 360mW | 20 ns | 360mW Ta | 110mA | SWITCHING | 25 ns | SILICON | N-Channel | 15 Ω @ 200mA, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | 15 ns | 20V | 350V | 110mA Tj | 22 pF | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MCP87090T-U/MF | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | EAR99 | 5mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | not_compliant | 1mm | 6mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - annealed | 260 | 40 | MCP87090 | YES | FET General Purpose Powers | 1 | Single | 2.2W | 2.5 ns | 1.35V | 2.2W Ta | 64A | 5.3 ns | N-Channel | 10.5m Ω @ 10V | 1.7V @ 250μA | 580pF @ 12.5V | 10nC @ 4.5V | 9.3ns | 2.9 ns | 10V | 25V | 1.35 V | 64A Tc | 4.5V 10V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
LP0701LG-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | No | 8 | LOW THRESHOLD | 8-SOIC (0.154, 3.90mm Width) | 1.65mm | 3.9mm | Surface Mount | 84.99187mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1.5W | 20 ns | 1.5W Tc | 700mA | SWITCHING | 30 ns | SILICON | P-Channel | 1.5 Ω @ 300mA, 5V | 1V @ 1.1mA | 250pF @ 15V | 20ns | 20 ns | 10V | -16.5V | 0.7A | 700mA Tj | 16.5V | 60 pF | 2V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN0300L-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | 1 | Single | 1W | 1W Tc | 640mA | SWITCHING | SILICON | N-Channel | 1.2 Ω @ 1A, 10V | 2.5V @ 1mA | 190pF @ 20V | 30V | 30V | 0.64A | 640mA Tj | 50 pF | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN2460N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 1 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | 4 | FAST SWITCHING | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Not Qualified | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 160mA | SWITCHING | 25Ohm | 25 ns | SILICON | N-Channel | 20 Ω @ 100mA, 10V | 4V @ 2mA | 150pF @ 25V | 10ns | 10 ns | 20V | 600V | 0.2A | 200mA Tj | 25 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN1206L-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | NOT APPLICABLE | 1 | Not Qualified | 1 | Single | 1W | 8 ns | 1W Tc | 230mA | SWITCHING | 6Ohm | 18 ns | SILICON | N-Channel | 6 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | 8ns | 12 ns | 30V | 120V | 230mA Tj | 20 pF | 2.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN0550N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | 1 | Single | 1W | 10 ns | 1W Tc | 50mA | SWITCHING | 10 ns | SILICON | N-Channel | 60 Ω @ 50mA, 10V | 4V @ 1mA | 55pF @ 25V | 15ns | 10 ns | 20V | 500V | 0.05A | 50mA Tj | 5 pF | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VN2210N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | 1 | Single | 1W | 10 ns | 740mW Tc | 1.2A | SWITCHING | 50 ns | SILICON | N-Channel | 350m Ω @ 4A, 10V | 2.4V @ 10mA | 500pF @ 25V | 10ns | 30 ns | 20V | 100V | 1.2A Tj | 65 pF | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN2640N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | FET General Purpose Power | 1 | Single | 740mW | 4 ns | 740mW Ta | 220mA | SWITCHING | 5Ohm | 20 ns | SILICON | N-Channel | 5 Ω @ 500mA, 10V | 2V @ 2mA | 225pF @ 25V | 15ns | 22 ns | 20V | 400V | 0.22A | 220mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP0604N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Bulk | 2012 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | Other Transistors | 1 | Single | 1W | 5 ns | 740mW Ta | 430mA | SWITCHING | 2Ohm | 10 ns | SILICON | P-Channel | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 150pF @ 20V | 7ns | 6 ns | 20V | -40V | 0.75A | 430mA Tj | 40V | 60 pF | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TN5325N3-G-P002 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 3 | 150°C | -55°C | 5.21mm | ROHS3 Compliant | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | O-PBCY-T3 | 1 | 1 | Single | 20 ns | 740mW Ta | 215mA | SWITCHING | 7Ohm | 25 ns | N-Channel | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | 25 ns | 20V | 250V | 215mA Ta | 23 pF | 4.5V 10V | ±20V |
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