All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Voltage - Rated DC | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N4150UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | Military, MIL-PRF-19500/231 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | 50V | 200mA | 100nA | 50V | 4A | 4 ns | ||||||||||||||||||||||||||||||||||||||
| 1N6638US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Surface Mount | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | No | 2 | METALLURGICALLY BONDED | MELF | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | SILICON | 1 | RECTIFIER DIODE | 0.3A | 300mA | 1.1V | ISOLATED | Single | 500nA | 125V | 2.5A | 4.5 ns | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5550 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | 200V | 5A | 1μA | 200V | 100A | 2 μs | |||||||||||||||||||||||||||||||||||||||
| 1N5623US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | 1kV | 1A | 500nA | 1kV | 30A | 1000V | 13 °C/W | 500 ns | 15pF @ 12V 1MHz | |||||||||||||||||||||||||||||||||
| JANTX1N6638U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 300mA | 1.1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 125V | 1.1V @ 200mA | -65°C~175°C | 500nA | 125V | 2.5A | 300mA DC | 4.5 ns | 0.75W | ||||||||||||||||||||||||||||||||||
| JAN1N5417 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | END | WRAP AROUND | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | 200V | 3A | 1μA | 200V | 80A | 150 ns | |||||||||||||||||||||||||||||||||||||||
| APT15D60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 15A | No | TO-247-2 | Through Hole | 600V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | APT15D60 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 15A | 15A | 1.8V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 600V | 1.8V @ 15A | -55°C~175°C | 600V | 15A | 150μA | 600V | 110A | 80 ns | ||||||||||||||||||||||||||||||||||||
| APT15D120KG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 10.26mm | RoHS Compliant | Lead Free | 15A | No | TO-220-3 | 9.19mm | 4.72mm | Through Hole | 6.000006g | 1.2kV | 8541.10.00.80 | e3 | PURE MATTE TIN | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | TO-220AC | 15A | 15A | 2.5V | CATHODE | 110A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.5V @ 15A | -55°C~175°C | 1.2kV | 15A | 250μA | 1.2kV | 110A | 1200V | 260 ns | 1.2kV | 260 ns | |||||||||||||||||||||||||||
| 1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | SQ-MELF, B | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | NO | O-LALF-W2 | Not Qualified | SILICON | 1 | SINGLE | Standard | 3A | 1 | 80A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 250ns | ||||||||||||||||||||||||||||||||||||||||
| APT15DQ100BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 15A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 1kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 15A | 15A | 3.06V | CATHODE | 80A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 3V @ 15A | -55°C~175°C | 1kV | 15A | 250μA | 1kV | 80A | 1000V | 235 ns | 1kV | 235 ns | ||||||||||||||||||||||||||||
| JANTX1N5618 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||
| JAN1N4148UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/241 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | Qualified | MIL-19500/116L | SILICON | 1 | Standard | 1.2V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 25nA @ 20V | 800mV @ 10mA | -65°C~175°C | 500nA | 75V | 2A | 100V | 200mA | 5 ns | 2.8pF @ 1.5V 1MHz | |||||||||||||||||||||||||||||||||||||
| JANTXV1N5551 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/420 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 5A | 1.2V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | 400V | 5A | 1μA | 400V | 100A | 2 μs | |||||||||||||||||||||||||||||||||||||
| JANTX1N6639US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Bulk | 1999 | Military, MIL-PRF-19500/609 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 2 | METALLURGICALLY BONDED | SQ-MELF, D | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500/609D | SILICON | 1 | Standard | 0.3A | 300mA | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 75V | 1.2V @ 300mA | -65°C~175°C | 75V | 2.5A | 300mA DC | 0.1μA | 4ns | ||||||||||||||||||||||||||||||||||
| JANTXV1N6642US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 100V | 1.2V @ 100mA | -65°C~175°C | 100V | 300mA | 500nA | 75V | 2.5A | 20 ns | |||||||||||||||||||||||||||||||||||
| JANTX1N6642US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | No | 2 | METALLURGICALLY BONDED | SQ-MELF, D | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 1N6642 | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 300mA | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 300mA | 75V | 2.5A | 0.5μA | 5 ns | 5pF @ 0V 1MHz | |||||||||||||||||||||||||||||||
| 1N6621 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | A, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | 440V | 1.2A | 440V | 20A | 0.5μA | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||
| JANTXV1N6492 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/567 | no | Active | 1 (Unlimited) | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 3 | TO-205AF Metal Can | Through Hole | e0 | Tin/Lead (Sn/Pb) | Qualified | SILICON | 1 | Schottky | 1.2A | 680mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 560mV @ 2A | -65°C~175°C | 2mA | 45V | 80A | 3.6A | 450pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4247 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/286 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | 600V | 1A | 1μA | 600V | 25A | 5 μs | ||||||||||||||||||||||||||||||||||||
| APT60D20BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 60A | No | TO-247-2 | Through Hole | 200V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | R-PSFM-T2 | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 60A | 1.3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 200V | 1.3V @ 60A | -55°C~175°C | 200V | 60A | 250μA | 200V | 600A | 31 ns | ||||||||||||||||||||||||||||||||||||||
| APT75DQ100BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 75A | No | TO-247-2 | Through Hole | 1kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 75A | 75A | 3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 3V @ 75A | -55°C~175°C | 1kV | 75A | 100μA | 1kV | 540A | 1000V | 250 ns | |||||||||||||||||||||||||||||||||||
| CDLL4148 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | SILICON | 1 | Standard | 200mA | 1.2V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 500nA @ 75V | 1V @ 200mA | -65°C~175°C | 75V | 200mA | 500nA | 75V | 2A | 325 °C/W | 20 ns | 4pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||
| JANTX1N6677UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/610 | no | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA (Glass) | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/610E | SILICON | 1 | Schottky | 200mA | 700mV | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 5μA @ 40V | 500mV @ 200mA | -65°C~125°C | 5μA | 40V | ||||||||||||||||||||||||||||||||||||||||
| JANTX1N5807 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 50V | 875mV @ 4A | -65°C~175°C | 50V | 3A | 5μA | 50V | 125A | 30 ns | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||
| JANTX1N5553 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/420 | no | Active | 1 (Unlimited) | 2 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | B, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | SILICON | 1 | Standard | 5A | POWER | 1 | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 800V | 1.3V @ 9A | -65°C~175°C | 800V | 5A | 100A | 2 μs | |||||||||||||||||||||||||||||||||||
| JANTX1N5415 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | 50V | 3A | 1μA | 50V | 80A | 150 ns | ||||||||||||||||||||||||||||||||||||
| JAN1N5419 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | 500V | 3A | 1μA | 500V | 80A | 250 ns | ||||||||||||||||||||||||||||||||||||||||
| JAN1N5819UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/586 | no | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AB, MELF (Glass) | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/586F | SILICON | 1 | Schottky | 1A | 1A | 800mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 45V | 490mV @ 1A | -65°C~125°C | 50μA | 45V | 70pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N4247 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/286 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | 600V | 1A | 1μA | 600V | 25A | 5 μs | |||||||||||||||||||||||||||||||||||||
| JANTXV1N5619 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | DO-7 | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | 600V | 1A | 500nA | 600V | 30A | 250 ns | 25pF @ 12V 1MHz |