Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Operating Temperature (Max) | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Element Configuration | Power Dissipation | Turn On Delay Time | Supplier Device Package | Power Dissipation-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Turn On Time-Max (ton) | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Turn Off Time-Max (toff) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic |
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2N3439UA | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 4 | 4-SMD, No Lead | Surface Mount | -65°C~200°C TJ | e4 | GOLD OVER NICKEL | DUAL | 260 | 30 | 3 | R-XDSO-N3 | 800mW | 1 | SINGLE | NPN | 800mW | 1A | 350V | 350V | SILICON | NPN | 2μA | 450V | 7V | 40 @ 20mA 10V | 500mV @ 4mA, 50mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN2N6384 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/523 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | TO-204AA, TO-3 | Through Hole | -55°C~175°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Qualified | 6W | 1 | NPN | COLLECTOR | Single | 60V | SILICON | NPN - Darlington | 1mA | 2V | 10A | 60V | 5V | 1000 @ 5A 3V | 3V @ 100mA, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6673 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Bulk | no | Active | 2 | Non-RoHS Compliant | Lead, Tin | TO-3 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | Other Transistors | Not Qualified | 150W | 1 | Single | NPN | 10 | 150W | 8A | 400V | SILICON | 15MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N2102S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | 2007 | no | Active | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-5 | e0 | TIN LEAD | BOTTOM | WIRE | 3 | 5W | 1 | NPN | 40 | 5W | 1A | 65V | SILICON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JAN2N3507 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/349 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 3 | Other Transistors | Qualified | 1 | SINGLE | COLLECTOR | NPN | 1W | 50V | SWITCHING | SILICON | NPN | 45ns | 60MHz | 90ns | 3A | 80V | 5V | 30 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV2N3741 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2002 | Military, MIL-PRF-19500/441 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | No | 3 | TO-213AA, TO-66-2 | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 25W | 1 | SINGLE | COLLECTOR | PNP | 25W | 4A | 80V | SWITCHING | SILICON | PNP | 10μA | 80V | 7V | 30 @ 250mA 1V | 600mV @ 125mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N5681 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2002 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | 3 | TO-39 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | Qualified | 1W | 1 | SINGLE | TO-205AD | NPN | 5 | 1W | 1A | 100V | AMPLIFIER | 30MHz | 100V | 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N5336 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | 2007 | no | Active | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-39 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 200°C | Other Transistors | 6W | 1 | SINGLE | NPN | 20 | 6W | 5A | 80V | SWITCHING | SILICON | 200ns | 30MHz | 2200ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3584 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Other Transistors | 2.5W | 1 | SINGLE | TO-66 | COLLECTOR | NPN | 25 | 2A | 250V | SWITCHING | 10MHz | 375V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N5667 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/455 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Qualified | 1.2W | 1 | SINGLE | COLLECTOR | NPN | 1.2W | 5A | 300V | SWITCHING | SILICON | NPN | 200nA | 400V | 6V | 25 @ 1A 5V | 1V @ 1A, 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV2N3868 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | no | Active | 3 | EAR99 | 200°C | -55°C | Non-RoHS Compliant | No | 3 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Qualified | 1W | 1 | SINGLE | TO-5 | COLLECTOR | PNP | 20 | 3A | 60V | SWITCHING | 100ns | 600ns | 60V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6350 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | no | Active | 4 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 4 | TO-33 | e0 | TIN LEAD | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | NPN | 5A | 400 | Single | 80V | 500ns | 1.5V | 80V | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N5680 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 3 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Lead, Tin | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | NOT SPECIFIED | NOT SPECIFIED | O-MBCY-W3 | Other Transistors | Qualified | 1W | MIL-19500/582 | 1 | SINGLE | TO-205AD | PNP | 5 | 1A | 120V | AMPLIFIER | 30MHz | 120V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6301 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 2007 | no | Active | 2 | EAR99 | Non-RoHS Compliant | Lead, Tin | 3 | e0 | TIN LEAD | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 2 | O-MBFM-P2 | 200°C | Not Qualified | 1 | COLLECTOR | NPN | 8A | 100 | Single | 80V | SILICON | 4MHz | 80V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N3867S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/350 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | No | 3 | TO-205AD, TO-39-3 Metal Can | Through Hole | -65°C~200°C TJ | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | 2 | Qualified | 1W | 1 | SINGLE | COLLECTOR | PNP | 1W | 3A | 40V | SWITCHING | SILICON | PNP | 600ns | 100μA ICBO | 40V | 4V | 40 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX2N3867 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 2007 | Military, MIL-PRF-19500/350 | no | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | No | 3 | TO-205AA, TO-5-3 Metal Can | Through Hole | -65°C~200°C TJ | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | WIRE | Qualified | 1W | 1W | 1 | SINGLE | COLLECTOR | PNP | 3A | 40V | SWITCHING | SILICON | PNP | 100ns | 600ns | 100μA ICBO | 40V | 40 @ 1.5A 2V | 1.5V @ 250mA, 2.5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3879 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | 2002 | no | Active | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 3 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | Other Transistors | 35W | 1 | SINGLE | COLLECTOR | NPN | 12 | 7A | 75V | 40MHz | 120V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30F50B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 30A | No | FAST SWITCHING, AVALANCHE RATED | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | DRAIN | 415W | 20 ns | 415W Tc | 30A | SWITCHING | 50 ns | SILICON | N-Channel | 190m Ω @ 14A, 10V | 5V @ 1mA | 4525pF @ 25V | 115nC @ 10V | 23ns | 17 ns | 30V | 500V | 30A Tc | 90A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
APL502LG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 58A | No | TO-264-3, TO-264AA | 5.21mm | 20.5mm | 90mOhm | Through Hole | 10.6g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 730W | 13 ns | 730W Tc | 58A | 56 ns | SILICON | N-Channel | 90m Ω @ 29A, 12V | 4V @ 2.5mA | 9000pF @ 25V | 27ns | 16 ns | 30V | 500V | 58A Tc | 232A | 3000 mJ | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
APT5018BLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1997 | POWER MOS 7® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 27A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 300W | 9 ns | 300W Tc | 27A | SWITCHING | 18 ns | SILICON | N-Channel | 180m Ω @ 13.5A, 10V | 5V @ 1mA | 2596pF @ 25V | 58nC @ 10V | 4ns | 2 ns | 30V | 27A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANS2N3810L/TR | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | Military, MIL-PRF-19500/336 | Active | TO-78-6 Metal Can | Through Hole | -65°C~200°C TJ | TO-78 | 2 PNP (Dual) | 10μA ICBO | 150 @ 1mA 5V | 250mV @ 100μA, 1mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT14F100B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | Tin | 14A | No | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | Through Hole | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 500W | 28 ns | 500W Tc | 14A | SWITCHING | 0.98Ohm | 95 ns | SILICON | N-Channel | 980m Ω @ 7A, 10V | 5V @ 1mA | 3965pF @ 25V | 120nC @ 10V | 29ns | 26 ns | 30V | 14A Tc | 1000V | 56A | 875 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
APT56M50B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 56A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 780W | 38 ns | 780W Tc | 56A | SWITCHING | 100 ns | SILICON | N-Channel | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 8800pF @ 25V | 220nC @ 10V | 45ns | 33 ns | 30V | 500V | 56A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
APT100F50J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Chassis Mount, Screw | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | No | 4 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 960W | 105 ns | 960W Tc | 103A | SWITCHING | 0.038Ohm | 500V | 280 ns | SILICON | N-Channel | 36m Ω @ 75A, 10V | 5V @ 5mA | 24600pF @ 25V | 620nC @ 10V | 125ns | 90 ns | 30V | 103A Tc | 500V | 3350 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APTC60SKM24T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | CoolMOS™ | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | Tin | No | 1 | AVALANCHE RATED | SP1 | Chassis Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | UPPER | THROUGH-HOLE | 12 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | 21 ns | 462W Tc | 95A | CHOPPER | 0.024Ohm | 600V | 100 ns | SILICON | N-Channel | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 14400pF @ 25V | 300nC @ 10V | 30ns | 45 ns | 20V | 95A Tc | 600V | 260A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APT5014BLLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | POWER MOS 7® | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | Tin | 35A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 403W | 11 ns | 403W Tc | 35A | SWITCHING | 23 ns | SILICON | N-Channel | 140m Ω @ 17.5A, 10V | 5V @ 1mA | 3261pF @ 25V | 72nC @ 10V | 6ns | 3 ns | 30V | 35A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
APT20M22LVRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 31 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | POWER MOS V® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 100A | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 520W | 16 ns | 520W Tc | 100A | SWITCHING | 0.022Ohm | 48 ns | SILICON | N-Channel | 22m Ω @ 500mA, 10V | 4V @ 2.5mA | 10200pF @ 25V | 435nC @ 10V | 25ns | 5 ns | 30V | 100A Tc | 400A | 2500 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
APT38F80B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | SINGLE | 3 | R-PSIP-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AB | DRAIN | 1.04kW | 46 ns | 1040W Tc | 41A | SWITCHING | 0.24Ohm | 800V | 200 ns | SILICON | N-Channel | 240m Ω @ 20A, 10V | 5V @ 2.5mA | 8070pF @ 25V | 260nC @ 10V | 65ns | 60 ns | 30V | 41A Tc | 800V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
APT50M75JLLU2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2006 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 38.2mm | RoHS Compliant | Lead Free | No | 4 | AVALANCHE RATED | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | 75mOhm | Chassis Mount | 30.000004g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 1 | ISOLATED | Single | 290W | 10 ns | 290W Tc | 51A | SWITCHING | 500V | 21 ns | SILICON | N-Channel | 75m Ω @ 25.5A, 10V | 5V @ 1mA | 5590pF @ 25V | 123nC @ 10V | 20ns | 5 ns | 30V | 51A Tc | 500V | 2500 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
APT58M50J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | Tube | 1997 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | 58A | No | 4 | FAST SWITCHING, AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | UPPER | UNSPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | 540W | 60 ns | 540W Tc | 58A | SWITCHING | 0.065Ohm | 155 ns | SILICON | N-Channel | 65m Ω @ 42A, 10V | 5V @ 2.5mA | 13500pF @ 25V | 340nC @ 10V | 70ns | 50 ns | 30V | 58A Tc | 270A | 10V | ±30V |
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