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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Input Type | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Reverse Voltage (DC) | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Max Junction Temperature (Tj) | Transistor Application | Transistor Element Material | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT40GP60B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 40A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 49 ns | 2.7V @ 15V, 40A | 160 ns | PT | 20V | 6V | 400V, 40A, 5 Ω, 15V | 135nC | 160A | 20ns/64ns | 385μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT70GR120L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 961W | 961W | N-CHANNEL | Single | 160A | 1.2kV | 3.2V | 3.2V @ 15V, 70A | NPT | 30V | 1200V | 6.5V | 600V, 70A, 4.3 Ω, 15V | 544nC | 280A | 33ns/278ns | 3.82mJ (on), 2.58mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GP60B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 150A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 150A | 600V | 600V | POWER CONTROL | SILICON | 55 ns | 2.7V @ 15V, 50A | 200 ns | PT | 6V | 400V, 50A, 4.3 Ω, 15V | 165nC | 190A | 19ns/85ns | 465μJ (on), 635μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80GA90LD40 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 145A | 900V | 900V | POWER CONTROL | 49 ns | 3.1V @ 15V, 47A | 320 ns | PT | 600V, 47A, 4.7 Ω, 15V | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT65GP60L2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 198A | No | 3 | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 198A | 600V | 600V | POWER CONTROL | SILICON | 85 ns | 2.7V @ 15V, 65A | 220 ns | PT | 6V | 400V, 65A, 5 Ω, 15V | 210nC | 250A | 30ns/90ns | 605μJ (on), 895μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT35GP120B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 96A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 96A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 36 ns | 3.9V @ 15V, 35A | 220 ns | PT | 1200V | 6V | 600V, 35A, 4.3 Ω, 15V | 150nC | 140A | 16ns/95ns | 750μJ (on), 680μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X21DC60J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount, Screw | Bulk | 1997 | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 4 | ISOTOP | Chassis Mount | UPPER | UNSPECIFIED | 4 | Other Diodes | 2 | Silicon Carbide Schottky | POWER | 1 | 20A | 1.8V | ISOLATED | No Recovery Time > 500mA (Io) | 400μA @ 600V | 1.8V @ 20A | -55°C~175°C | 600V | 20A | 400μA | 600V | 250A | 2 Independent | 0 s | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30200FCTE3/TU | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | Through Hole | 8541.10.00.80 | SINGLE | 175°C | SILICON | 2 | Schottky | EFFICIENCY | 1 | TO-220AB | 275A | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 200V | 900mV @ 15A | -65°C~175°C | 200V | 15A | 1 Pair Common Cathode | 50μA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X31D40J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 30A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 400V | UPPER | UNSPECIFIED | 4 | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 1.3V | ISOLATED | 320A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 400V | 1.5V @ 30A | 400V | 30A | 250μA | 400V | 320A | 2 Independent | 32 ns | 400V | 22 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR3050CTE3/TU | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | Through Hole | 8541.10.00.80 | SINGLE | R-PSFM-T3 | 175°C | SILICON | 2 | Schottky | EFFICIENCY | 1 | TO-220AB | 275A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 50V | 750mV @ 15A | -65°C~175°C | 50V | 15A | 1 Pair Common Cathode | 50μA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X61D20J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | RoHS Compliant | Lead Free | 60A | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | 200V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 200V | 1.3V @ 60A | 200V | 60A | 250μA | 200V | 600A | 2 Independent | 31 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSCD120-12 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | RoHS Compliant | No | 3 | UL RECOGNIZED | D1 | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | 3 | Rectifier Diodes | SILICON | 2 | Standard | GENERAL PURPOSE | 1 | 120A | 1.43V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 6mA @ 1200V | 1.43V @ 300A | 1.2kV | 120A | 6mA | 1.2kV | 2.8kA | 1 Pair Series Connection | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X30D60J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | RoHS Compliant | Lead Free | 30A | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | 600V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 1.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 600V | 1.8V @ 30A | 600V | 30A | 250μA | 600V | 320A | 2 Independent | 85 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR3090CTE3/TU | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | Through Hole | 8541.10.00.80 | SINGLE | R-PSFM-T3 | 175°C | SILICON | 2 | Schottky | EFFICIENCY | 1 | TO-220AB | 275A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 90V | 800mV @ 15A | -65°C~175°C | 90V | 15A | 1 Pair Common Cathode | 50μA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT30050 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | Obsolete | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | Contains Lead | 300A | No | 3 | MD3CC | Chassis Mount | 50V | 4.6nF | Schottky | 300A | 760mV | Common Cathode | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 50V | 760mV @ 200A | 50V | 150A | 4mA | 50V | 2kA | 1 Pair Common Cathode | 50V | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30DQ60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 30A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | APT30DQ60 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 2V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 30A | -55°C~175°C | 600V | 30A | 25μA | 600V | 320A | 30 ns | 600V | 19 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15D100BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | RoHS Compliant | Lead Free | 15A | No | TO-247-2 | Through Hole | 1kV | 8541.10.00.80 | e1 | TIN SILVER COPPER | APT15D100 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 15A | 15A | 2.3V | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1000V | 2.3V @ 15A | -55°C~175°C | 1kV | 15A | 250μA | 1kV | 80A | 1000V | 260 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSAD120-16 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | 93mm | RoHS Compliant | No | 1 | UL RECOGNIZED | D1 | 30.5mm | 21mm | Chassis Mount | e0 | TIN LEAD | UPPER | UNSPECIFIED | 3 | R-XUFM-X3 | SILICON | 2 | Standard | GENERAL PURPOSE | 1 | 120A | 120A | 1.15V | ISOLATED | Common Anode | Standard Recovery >500ns, > 200mA (Io) | 6mA @ 1600V | 1.43V @ 300A | 1.6kV | 120A | 6mA | 1.6kV | 2.8kA | 1 Pair Common Anode | 1600V | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT400100 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | 2010 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 3 | Twin Tower | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | R-XUFM-X2 | SILICON | 2 | Schottky | POWER | 1 | 400A | 890mV | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 100V | 890mV @ 200A | 100V | 200A | 5mA | 100V | 3kA | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5615US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | 200V | 1A | 500nA | 200V | 30A | 13 °C/W | 150 ns | 45pF @ 12V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1999 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead Free | Lead, Tin | No | 2 | DO-204AH, DO-35, Axial | 1.91mm | Through Hole | 4pF | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500/116L | SILICON | 1 | Standard | 100mA | 1.2V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | 75V | 200mA | 500nA | 75V | 2A | 2A | 5 ns | 75V | 175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 60A | No | TO-247-2 | 25.96mm | 16.26mm | Through Hole | 6.500007g | 1.2kV | 60pF | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 60A | 60A | 2.5V | CATHODE | 540A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.5V @ 60A | -55°C~175°C | 1.2kV | 60A | 250μA | 1.2kV | 540A | 540A | 1200V | 400 ns | 1.2kV | 1.2kV | 400 ns | 175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 30A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 1.2kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 2.5V | CATHODE | 210A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.5V @ 30A | -55°C~175°C | 1.2kV | 30A | 250μA | 1.2kV | 210A | 1200V | 370 ns | 1.2kV | 370 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X101D40J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 100A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 400V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 100A | 1.3V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 400V | 1.5V @ 100A | -55°C~175°C | 400V | 100A | 500μA | 400V | 1kA | 2 Independent | 50 ns | 400V | 37 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6660 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/608 | no | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | TO-254-3, TO-254AA (Straight Leads) | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1N6660 | 3 | S-XSFM-P3 | Qualified | MIL-19500/608 | SILICON | 2 | Schottky | POWER | 1 | 15A | 1V | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 750mV @ 15A | 150°C Max | 45V | 15A | 45V | 300A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS840E3/TR13 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Tape & Reel (TR) | 1997 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | 4.43mm | RoHS Compliant | Lead Free | 8A | No | 3 | HIGH RELIABILITY | Powermite®3 | 1.14mm | 4.09mm | Surface Mount | 40V | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | UPS840 | 3 | R-PSSO-G2 | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 8A | Standard | 8A | 450mV | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 40V | 450mV @ 8A | -55°C~125°C | 40V | 8A | 5mA | 40V | 150A | 150A | 40V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40DQ60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 40A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 40A | 40A | 2V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 2.4V @ 40A | -55°C~175°C | 600V | 40A | 25μA | 600V | 320A | 25 ns | 600V | 22 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | 75A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 1.2kV | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 75A | 75A | 3.48V | CATHODE | 540A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 3.1V @ 75A | -55°C~175°C | 1.2kV | 75A | 100μA | 1.2kV | 540A | 1200V | 325 ns | 1.2kV | 325 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20GN60BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 40A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 136W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 19 ns | 1.9V @ 15V, 20A | 290 ns | Trench Field Stop | 30V | 6.5V | 400V, 20A, 4.3 Ω, 15V | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80GP60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | POWER MOS 7® | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 100A | No | 3 | TO-247-3 Variant | Through Hole | 600V | Standard | 1041W | Single | T-MAX™ [B2] | 100A | 600V | 2.7V @ 15V, 80A | PT | 600V | 100A |