Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Application | Number of Phases | JEDEC-95 Code | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Turn On Delay Time | Supplier Device Package | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Reverse Recovery Time | Reverse Voltage (DC) | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
APTGT25A120T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount | 2007 | Obsolete | 1 (Unlimited) | 12 | RoHS Compliant | 1 | SP1 | unknown | Chassis Mount | -40°C~150°C TJ | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 12 | Insulated Gate BIP Transistors | Not Qualified | 156W | 156W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 40A | 1.2kV | 2.1V | MOTOR CONTROL | SILICON | 1.8nF | 250μA | 140 ns | 2.1V @ 15V, 25A | 610 ns | Trench Field Stop | Yes | 20V | 1.8nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGT25A120D1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | yes | Discontinued | 1 (Unlimited) | 7 | RoHS Compliant | D1 | Chassis Mount | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | 150°C | 140W | 140W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 40A | 1.2kV | 2.1V | MOTOR CONTROL | SILICON | 1.8nF | 5mA | 280 ns | 2.1V @ 15V, 25A | 830 ns | Trench Field Stop | No | 1.8nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GF120JRDQ2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 1999 | no | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | 60A | 4 | UL RECOGNIZED, HIGH RELIABILITY | ISOTOP | Chassis Mount | -55°C~150°C TJ | 1.2kV | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 347W | 347W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 77A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.46nF | 500μA | 68 ns | 3V @ 15V, 40A | 395 ns | NPT | No | 30V | 3.46nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GT120JRDQ2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount | 2005 | Thunderbolt IGBT® | yes | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | Lead Free | 110A | 4 | UL RECOGNIZED, HIGH RELIABILITY | ISOTOP | Chassis Mount | -55°C~150°C TJ | 1.2kV | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 379W | 379W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 72A | 1.2kV | 3.7V | POWER CONTROL | SILICON | 2.5nF | 400μA | 73 ns | 3.7V @ 15V, 50A | 305 ns | NPT | No | 30V | 2.5nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APTGT225DA170G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1250W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 340A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 20nF | 500μA | 450 ns | 2.4V @ 15V, 225A | 1100 ns | Trench Field Stop | No | 20nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT2X101D40J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | Tube | 1997 | yes | Active | 1 (Unlimited) | 4 | 175°C | -55°C | 38.2mm | RoHS Compliant | Lead Free | 100A | No | 4 | SOT-227-4, miniBLOC | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | 400V | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 100A | 1.3V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 400V | 1.5V @ 100A | -55°C~175°C | 400V | 100A | 500μA | 400V | 1kA | 2 Independent | 50 ns | 400V | 37 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N6660 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/608 | no | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | TO-254-3, TO-254AA (Straight Leads) | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | SINGLE | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1N6660 | 3 | S-XSFM-P3 | Qualified | MIL-19500/608 | SILICON | 2 | Schottky | POWER | 1 | 15A | 1V | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 750mV @ 15A | 150°C Max | 45V | 15A | 45V | 300A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT11GP60BDQBG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | POWER MOS 7® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 41A | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 187W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 16 ns | 2.7V @ 15V, 11A | 150 ns | PT | 600V | 400V, 11A, 5 Ω, 15V | 40nC | 45A | 7ns/29ns | 46μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT40GP60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 100A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 543W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | POWER CONTROL | SILICON | 49 ns | 2.7V @ 15V, 40A | 158 ns | PT | 400V, 40A, 5 Ω, 15V | 135nC | 160A | 20ns/64ns | 385μJ (on), 352μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT15GT60KRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | Thunderbolt IGBT® | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 42A | No | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e3 | PURE MATTE TIN | 3 | Insulated Gate BIP Transistors | 184W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 42A | 600V | 2.5V | POWER CONTROL | SILICON | 14 ns | 2.5V @ 15V, 15A | 225 ns | NPT | 5V | 400V, 15A, 10 Ω, 15V | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT33GF120LRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 38 Weeks | Through Hole | Tube | 1999 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 64A | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 357W | 1 | COLLECTOR | N-CHANNEL | Single | 64A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 31 ns | 3V @ 15V, 25A | 355 ns | NPT | 30V | 1200V | 6.5V | 800V, 25A, 4.3 Ω, 15V | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20GF120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 32A | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 32A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 20 ns | 3.2V @ 15V, 15A | 175 ns | NPT | 1200V | 95nC | 64A | 17ns/105ns | 2.7mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT20GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 43A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 174W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 43A | 600V | 600V | POWER CONTROL | SILICON | 17 ns | 2.5V @ 15V, 20A | 160 ns | NPT | 30V | 5V | 400V, 20A, 5 Ω, 15V | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GP90BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 72A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 900V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 417W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 72A | 900V | 900V | POWER CONTROL | SILICON | 29 ns | 3.9V @ 15V, 25A | 190 ns | PT | 600V, 25A, 5 Ω, 15V | 110nC | 110A | 13ns/55ns | 370μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT102GA60B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 780W | 780W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 183A | 600V | 600V | POWER CONTROL | SILICON | 64 ns | 2.5V @ 15V, 62A | 389 ns | PT | 30V | 6V | 400V, 62A, 4.7 Ω, 15V | 294nC | 307A | 28ns/212ns | 1.354mJ (on), 1.614mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GS60BRDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 415W | 415W | Single | TO-247 | 93A | 600V | 600V | 3.15V @ 15V, 50A | NPT | 600V | 93A | 400V, 50A, 4.7Ohm, 15V | 235nC | 195A | 16ns/225ns | 755μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GS60BRDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 54A | 600V | 600V | POWER CONTROL | SILICON | 45 ns | 3.15V @ 15V, 30A | 412 ns | NPT | 400V, 30A, 9.1 Ω, 15V | 145nC | 113A | 16ns/360ns | 570μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GP60B2DLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | OBSOLETE (Last Updated: 3 weeks ago) | Through Hole | Tube | 2001 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 463W | 463W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 600V | 600V | MOTOR CONTROL | SILICON | 31 ns | 2.7V @ 15V, 30A | 164 ns | PT | 20V | 6V | 400V, 30A, 5 Ω, 15V | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GR120BD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | 21.46mm | RoHS Compliant | Lead Free | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | N-CHANNEL | Single | 75A | 1.2kV | 1.2kV | 2.5V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 75A | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GP120B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 100A | No | 3 | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | 1.042kW | 1042W | 1 | COLLECTOR | N-CHANNEL | Single | 100A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 60 ns | 3.9V @ 15V, 75A | 359 ns | PT | 1200V | 100A | 600V, 75A, 5 Ω, 15V | 320nC | 300A | 20ns/163ns | 1620μJ (on), 2500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GR120B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | Single | 16 ns | 75A | 1.2kV | 3.2V | 122 ns | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GT120BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 54A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 347W | 1 | TO-247AA | COLLECTOR | N-CHANNEL | Single | 54A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 41 ns | 3.7V @ 15V, 25A | 220 ns | NPT | 1200V | 54A | 800V, 25A, 5 Ω, 15V | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT75GN120LG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 200A | No | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 60 ns | 200A | 1.2kV | 1.2kV | POWER CONTROL | 620 ns | SILICON | 1.7V | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | 30V | 1200V | 200A | 6.5V | 800V, 75A, 1 Ω, 15V | 425nC | 225A | 60ns/620ns | 8620μJ (on), 11400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GT60BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 110A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 446W | 1 | COLLECTOR | N-CHANNEL | Single | 22 ns | 110A | 600V | 600V | POWER CONTROL | SILICON | 2V | 46 ns | 2.5V @ 15V, 50A | 365 ns | NPT | 30V | 110A | 5V | 400V, 50A, 5 Ω, 15V | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
APT30GT60BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 64A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 22 ns | 64A | 600V | 600V | POWER CONTROL | SILICON | 32 ns | 2.5V @ 15V, 30A | 345 ns | NPT | 30V | 5V | 400V, 30A, 10 Ω, 15V | 7.5nC | 110A | 12ns/225ns | 80μJ (on), 605μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GN120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 67A | No | HIGH RELIABILITY | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 272W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 22 ns | 67A | 1.2kV | 1.2kV | POWER CONTROL | 280 ns | SILICON | 39 ns | 2.1V @ 15V, 25A | 560 ns | Trench Field Stop | 30V | 1200V | 6.5V | 800V, 25A, 1 Ω, 15V | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT50GR120B2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 694W | 694W | N-CHANNEL | 117A | 1.2kV | 3.2V | 3.2V @ 15V, 50A | NPT | 30V | 1200V | 6.5V | 600V, 50A, 4.3 Ω, 15V | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT85GR120L | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | 962W | 962W | Single | 170A | 1.2kV | 3.2V | 3.2V @ 15V, 85A | NPT | 1200V | 600V, 85A, 4.3 Ω, 15V | 660nC | 340A | 43ns/300ns | 6mJ (on), 3.8mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT35GP120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 96A | No | 3 | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 96A | 1.2kV | 3.9V | POWER CONTROL | SILICON | 36 ns | 3.9V @ 15V, 35A | 222 ns | PT | 20V | 1200V | 6V | 600V, 35A, 5 Ω, 15V | 150nC | 140A | 16ns/94ns | 750μJ (on), 680μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT25GT120BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 54A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 347W | 1 | COLLECTOR | N-CHANNEL | Single | 54A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 41 ns | 3.7V @ 15V, 25A | 186 ns | NPT | 30V | 1200V | 54A | 6.5V | 800V, 25A, 5 Ω, 15V | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) |
Products