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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Turn On Delay Time | Supplier Device Package | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5619US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | HIGH RELIABILITY | SQ-MELF, A | not_compliant | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | 600V | 1A | 500nA | 600V | 30A | 13 °C/W | 250 ns | 25pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N645-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | 1.88mm | Through Hole | 20pF | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | SILICON | 1 | Standard | 0.4A | 400mA | 1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | 225V | 400mA | 50nA | 225V | 5A | 5A | 0.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPR10E3/TR7 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Tape & Reel (TR) | 1997 | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -55°C | 2.03mm | RoHS Compliant | Lead Free | 2.5A | No | 2 | DO-216AA | 1.14mm | 2.03mm | Surface Mount | 100V | 8541.10.00.80 | e3 | MATTE TIN | DUAL | GULL WING | UPR10 | S-PDSO-G1 | SILICON | 1 | Standard | EFFICIENCY | 1 | 2.5A | 2.5A | 975mV | 25A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 100V | 975mV @ 2A | -55°C~150°C | 100V | 2.5A | 2μA | 100V | 25A | 25 ns | 100V | 25 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4150UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | DO-213AA (Glass) | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | 2 | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | 50V | 200mA | 100nA | 50V | 4A | 4 ns | 0.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4447 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Bulk | 1996 | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | NO | O-LALF-W2 | 150°C | Not Qualified | SILICON | 1 | SINGLE | Standard | 0.2A | 0.5A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | 25nA @ 20V | 1V @ 20mA | -65°C~150°C | 75V | 200mA | 0.025μA | 4ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5616US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/429 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | 400V | 1A | 500nA | 400V | 30A | 2 μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N648-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | SILICON | 1 | Standard | 0.4A | 400mA | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 50nA @ 500V | 1V @ 400mA | -65°C~175°C | 500V | 400mA | 500V | 0.5W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5821US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | 125°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 3A | GENERAL PURPOSE | 1 | 3A | 700mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 30V | 500mV @ 3A | -65°C~125°C | 30V | 3A | 100μA | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N645UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | MIL | SILICON | 1 | Standard | 0.4A | 400mA | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | 225V | 400mA | 225V | 0.5W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5803 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 2.5A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 75V | 875mV @ 1A | -65°C~175°C | 75V | 1A | 1μA | 75V | 35A | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N6638 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 1.1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 125V | 1.1V @ 200mA | -65°C~175°C | 125V | 300mA | 500nA | 150V | 2.5A | 4.5 ns | 2.5pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6073 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Bulk | 1997 | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | NO | O-LALF-W2 | 155°C | Not Qualified | MIL-19500/503 | SILICON | 1 | SINGLE | Standard | 0.85A | 50V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 50V | 2.04V @ 9.4A | -65°C~155°C | 50V | 850mA | 30ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30SCD120B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 1999 | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -55°C | RoHS Compliant | Lead Free | No | 2 | TO-247-2 | Through Hole | 8541.10.00.80 | Rectifier Diodes | 291W | 1 | Silicon Carbide Schottky | 30A | 1.8V | Single | No Recovery Time > 500mA (Io) | 600μA @ 1200V | 1.8V @ 30A | -55°C~150°C | 1.2kV | 99A | 1.2kV | 330A | 330A | 1200V | 99A DC | 0 s | 1.2kV | 2100pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20SCD120S | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 1999 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | RoHS Compliant | Lead Free | No | 3 | HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 8541.10.00.80 | GULL WING | R-PSSO-G2 | Rectifier Diodes | 1 | Silicon Carbide Schottky | GENERAL PURPOSE | 1 | 1.8V | CATHODE | Single | No Recovery Time > 500mA (Io) | 400μA @ 1200V | 1.8V @ 20A | -55°C~150°C | 1.2kV | 68A | 220A | 1200V | 68A DC | 400μA | 0 s | 208W | 1135pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300A120D3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | D-3 Module | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.25kW | 1250W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 440A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 20nF | 8mA | 400 ns | 2.1V @ 15V, 300A | 830 ns | Trench Field Stop | No | 20nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300DU170G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2011 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.66kW | 1660W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 400A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 26.5nF | 750μA | 450 ns | 2.4V @ 15V, 300A | 1100 ns | Trench Field Stop | No | 26.5nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ75H120TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | 2011 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 385W | Full Bridge | SP4 | Standard | 50μA | 2.4V @ 15V, 75A | Trench Field Stop | Yes | 4.4nF @ 25V | 1200V | 130A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100TDU60PG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 21 | EAR99 | RoHS Compliant | 21 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 21 | Insulated Gate BIP Transistors | 340W | 340W | 6 | Triple, Dual - Common Source | ISOLATED | N-CHANNEL | Standard | 150A | 600V | 600V | POWER CONTROL | SILICON | 6.1nF | 250μA | 180 ns | 1.9V @ 15V, 100A | 370 ns | Trench Field Stop | No | 20V | 6.1nF @ 25V | 1.9 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT450SK60G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.75kW | 1750W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 550A | 600V | 600V | POWER CONTROL | SILICON | 37nF | 500μA | 205 ns | 1.8V @ 15V, 450A | 400 ns | Trench Field Stop | No | 37nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50TDU60PG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 21 | RoHS Compliant | 21 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 21 | Insulated Gate BIP Transistors | 176W | 176W | 6 | Triple, Dual - Common Source | ISOLATED | N-CHANNEL | Standard | 80A | 600V | 600V | POWER CONTROL | SILICON | 3.15nF | 250μA | 170 ns | 1.9V @ 15V, 50A | 310 ns | Trench Field Stop | No | 20V | 3.15nF @ 25V | 1.9 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300A60G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.15kW | 1150W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 430A | 600V | 600V | POWER CONTROL | SILICON | 24nF | 350μA | 170 ns | 1.8V @ 15V, 300A | 320 ns | Trench Field Stop | No | 24nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT450DA60G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.75kW | 1750W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 550A | 600V | 600V | POWER CONTROL | SILICON | 37nF | 500μA | 205 ns | 1.8V @ 15V, 450A | 400 ns | Trench Field Stop | No | 37nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150SK120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 690W | 690W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 220A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 10.7nF | 350μA | 335 ns | 2.1V @ 15V, 150A | 610 ns | Trench Field Stop | No | 10.7nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DU60TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 340W | 340W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 150A | 600V | 600V | POWER CONTROL | SILICON | 6.1nF | 250μA | 180 ns | 1.9V @ 15V, 100A | 370 ns | Trench Field Stop | Yes | 6.1nF @ 25V | 1.9 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50SK170TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | No | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | 312W | 312W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 75A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1100 ns | Trench Field Stop | Yes | 4.4nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV40H60CT1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Chassis Mount, Screw | 1997 | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 1 | SP1 | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | Insulated Gate BIP Transistors | Not Qualified | 176W | 176W | 2 | Full Bridge | ISOLATED | N-CHANNEL | Standard | 80A | 600V | 1.9V | POWER CONTROL | SILICON | 3.15nF | 250μA | 170 ns | 1.9V @ 15V, 50A | 310 ns | Trench Field Stop | Yes | 20V | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ40H120T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | 2012 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | 1 | SP1 | Through Hole | -40°C~175°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Full Bridge | 30 ns | Standard | 75A | 1.2kV | 2.4V | 290 ns | 2.3nF | 100μA | 2.4V @ 15V, 40A | Trench Field Stop | Yes | 20V | 2.3nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75H60T3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 25 | EAR99 | RoHS Compliant | No | 32 | SP3 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 25 | R-XUFM-X25 | 250W | 250W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 100A | 600V | 600V | MOTOR CONTROL | SILICON | 4.62nF | 250μA | 170 ns | 1.9V @ 15V, 75A | 310 ns | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DH60TG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~175°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 14 | R-XUFM-X14 | Insulated Gate BIP Transistors | Not Qualified | 340W | 340W | 2 | Asymmetrical Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 150A | 600V | 600V | POWER CONTROL | SILICON | 6.1nF | 250μA | 180 ns | 1.9V @ 15V, 100A | 370 ns | Trench Field Stop | Yes | 6.1nF @ 25V | 1.9 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ75H65T1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | 2012 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | 1 | SP1 | Through Hole | -40°C~175°C TJ | Insulated Gate BIP Transistors | 250W | 250W | 1 | Full Bridge | 19 ns | Standard | 150A | 650V | 2.3V | 197 ns | 4.62nF | 100μA | 2.3V @ 15V, 75A | Trench Field Stop | Yes | 20V | 4.62nF @ 25V |