Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Subcategory | Max Power Dissipation | Power - Max | Number of Elements | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Turn On Delay Time | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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APT50GT120LRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 31 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | HIGH RELIABILITY | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 694W | 694W | 1 | COLLECTOR | N-CHANNEL | Single | 106A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 73 ns | 3.7V @ 15V, 50A | 305 ns | NPT | 1200V | 800V, 50A, 1 Ω, 15V | 240nC | 150A | 23ns/215ns | 2585μJ (on), 1910μJ (off) | |||||||||||||||||||||||||||||||
APT150GN60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | LOW CONDUCTION LOSS, HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~175°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 536W | 536W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 220A | 600V | 600V | POWER CONTROL | SILICON | 154 ns | 1.85V @ 15V, 150A | 575 ns | Trench Field Stop | 30V | 6.5V | 400V, 150A, 1 Ω, 15V | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | ||||||||||||||||||||||||||||
APT50GN60BDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | Lead Free | 107A | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 366W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 20 ns | 107A | 600V | 600V | POWER CONTROL | 230 ns | SILICON | 1.5V | 45 ns | 1.85V @ 15V, 50A | 400 ns | Trench Field Stop | 30V | 107A | 6.5V | 400V, 50A, 4.3 Ω, 15V | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | |||||||||||||||||||
APT44GA60BD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 337W | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 26A | 208 ns | PT | 30V | 6V | 400V, 26A, 4.7 Ω, 15V | 128nC | 130A | 16ns/84ns | 409μJ (on), 258μJ (off) | |||||||||||||||||||||||||||||
APT50GS60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | no | Active | 1 (Unlimited) | 21.46mm | RoHS Compliant | Lead Free | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | 415W | Single | 93A | 600V | 600V | 2.8V | 3.15V @ 15V, 50A | NPT | 93A | 400V, 50A, 4.7 Ω, 15V | 235nC | 195A | 16ns/225ns | 755μJ (off) | |||||||||||||||||||||||||||||||||||||||
APT64GA90B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 500W | 500W | 1 | COLLECTOR | N-CHANNEL | Single | 117A | 900V | 900V | POWER CONTROL | SILICON | 44 ns | 3.1V @ 15V, 38A | 352 ns | PT | 600V, 38A, 4.7 Ω, 15V | 162nC | 193A | 18ns/131ns | 1857μJ (on), 2311μJ (off) | |||||||||||||||||||||||||||||||||
APT54GA60B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 416W | 416W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 96A | 600V | 600V | POWER CONTROL | SILICON | 37 ns | 2.5V @ 15V, 32A | 291 ns | PT | 30V | 6V | 400V, 32A, 4.7 Ω, 15V | 158nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||
APT30GN60BDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 63A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 203W | 1 | COLLECTOR | N-CHANNEL | Single | 63A | 600V | 600V | POWER CONTROL | SILICON | 26 ns | 1.9V @ 15V, 30A | 255 ns | Trench Field Stop | 30V | 6.5V | 400V, 30A, 4.3 Ω, 15V | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | ||||||||||||||||||||||||||||
APT15GT60BRG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 42A | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 184W | 1 | COLLECTOR | N-CHANNEL | Single | 42A | 600V | 600V | POWER CONTROL | SILICON | 24 ns | 2.5V @ 15V, 15A | 258 ns | NPT | 30V | 5V | 400V, 15A, 10 Ω, 15V | 75nC | 45A | 6ns/105ns | 150μJ (on), 215μJ (off) | |||||||||||||||||||||||||||
APT50GT120B2RDLG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSFM-T3 | 694W | 694W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 106A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 73 ns | 3.7V @ 15V, 50A | 305 ns | NPT | 1200V | 800V, 50A, 4.7 Ω, 15V | 240nC | 150A | 23ns/215ns | 3585μJ (on), 1910μJ (off) | ||||||||||||||||||||||||||||||
APT50GT120B2RDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3/e1 | PURE MATTE TIN/TIN SILVER COPPER | 3 | R-PSFM-T3 | 625W | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 94A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 77 ns | 3.7V @ 15V, 50A | 303 ns | NPT | 1200V | 800V, 50A, 4.7 Ω, 15V | 340nC | 150A | 24ns/230ns | 2330μJ (off) | |||||||||||||||||||||||||||||||
APT75GN120B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 200A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 833W | 1 | COLLECTOR | N-CHANNEL | Single | 200A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 101 ns | 2.1V @ 15V, 75A | 925 ns | Trench Field Stop | 1200V | 6.5V | 800V, 75A, 1 Ω, 15V | 425nC | 225A | 60ns/620ns | 8045μJ (on), 7640μJ (off) | |||||||||||||||||||||||||||||
APT50GF120B2RG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2001 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 156A | No | 3 | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 781W | 781W | 1 | COLLECTOR | N-CHANNEL | Single | 135A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 106 ns | 3V @ 15V, 50A | 520 ns | NPT | 1200V | 6.5V | 800V, 50A, 1 Ω, 15V | 340nC | 150A | 25ns/260ns | 3.6mJ (on), 2.64mJ (off) | ||||||||||||||||||||||||||||
APT15GP60BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 15A | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 8 ns | 56A | 600V | 600V | POWER CONTROL | 29 ns | SILICON | 20 ns | 2.7V @ 15V, 15A | 160 ns | PT | 400V, 15A, 5 Ω, 15V | 55nC | 65A | 8ns/29ns | 130μJ (on), 120μJ (off) | |||||||||||||||||||||||||
APT15GN120BDQ1G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 45A | No | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 195W | 1 | COLLECTOR | N-CHANNEL | Single | 45A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 19 ns | 2.1V @ 15V, 15A | 355 ns | Trench Field Stop | 30V | 1200V | 6.5V | 800V, 15A, 4.3 Ω, 15V | 90nC | 10ns/150ns | 410μJ (on), 950μJ (off) | |||||||||||||||||||||||||||||
APT45GP120B2DQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 113A | No | 3 | TO-247-3 Variant | 5.31mm | 16.26mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 113A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 47 ns | 3.9V @ 15V, 45A | 230 ns | PT | 1200V | 113A | 6V | 600V, 45A, 5 Ω, 15V | 185nC | 170A | 18ns/100ns | 900μJ (on), 905μJ (off) | ||||||||||||||||||||||||
APT43GA90BD30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 21.46mm | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Pure Matte Tin (Sn) | 3 | R-PSFM-T3 | 337W | 1 | COLLECTOR | N-CHANNEL | Single | 78A | 900V | 900V | POWER CONTROL | SILICON | 2.5V | 28 ns | 3.1V @ 15V, 47A | 246 ns | PT | 78A | 600V, 25A, 4.7 Ω, 15V | 116nC | 129A | 12ns/82ns | 875μJ (on), 425μJ (off) | ||||||||||||||||||||||||||||
APT40GR120B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 500W | N-CHANNEL | Single | 88A | 1.2kV | 1.2kV | 3.2V @ 15V, 40A | NPT | 30V | 1200V | 6V | 600V, 40A, 4.3 Ω, 15V | 210nC | 160A | 22ns/163ns | 1.38mJ (on), 906μJ (off) | ||||||||||||||||||||||||||||||||||||||||
APT25GN120SG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Surface Mount | Tube | 1999 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 16.05mm | RoHS Compliant | Lead Free | Tin | No | 3 | HIGH RELIABILITY | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 5.08mm | 13.99mm | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | 245 | 30 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | 272W | 1 | COLLECTOR | N-CHANNEL | Single | 22 ns | 67A | 1.2kV | 1.2kV | POWER CONTROL | 280 ns | SILICON | 1.7V | 39 ns | 2.1V @ 15V, 25A | 560 ns | Trench Field Stop | 1200V | 67A | 6.5V | 800V, 25A, 1 Ω, 15V | 155nC | 75A | 22ns/280ns | ||||||||||||||||||||
APT200GN60B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 682W | 682W | TO-247AC | N-CHANNEL | Single | 50 ns | 283A | 600V | 600V | 560 ns | 1.85V @ 15V, 200A | Trench Field Stop | 20V | 6.5V | 400V, 200A, 1 Ω, 15V | 1180nC | 600A | 50ns/560ns | 13mJ (on), 11mJ (off) | |||||||||||||||||||||||||||||||||||
APT100GN60LDQ4G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | Tin | 100A | No | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~175°C TJ | 600V | Standard | e1 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 229A | 600V | 600V | POWER CONTROL | SILICON | 1.5V | 96 ns | 1.85V @ 15V, 100A | 435 ns | Trench Field Stop | 30V | 229A | 6.5V | 400V, 100A, 1 Ω, 15V | 600nC | 300A | 31ns/310ns | 4.75mJ (on), 2.675mJ (off) | |||||||||||||||||||||
APT35GA90BD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | 1999 | Active | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | No | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 290W | 290W | Single | TO-247 [B] | 63A | 900V | 900V | 3.1V @ 15V, 18A | PT | 900V | 63A | 600V, 18A, 10Ohm, 15V | 84nC | 105A | 12ns/104ns | 642μJ (on), 382μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
APT50GN120B2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 134A | No | 3 | HIGH RELIABILITY | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 134A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 55 ns | 2.1V @ 15V, 50A | 600 ns | NPT, Trench Field Stop | 1200V | 6.5V | 800V, 50A, 2.2 Ω, 15V | 315nC | 150A | 28ns/320ns | 4495μJ (off) | |||||||||||||||||||||||||||
APT80GA60B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | 16.26mm | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | 21.46mm | 5.31mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | e3 | PURE MATTE TIN | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 625W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 143A | 600V | 600V | POWER CONTROL | SILICON | 2V | 52 ns | 2.5V @ 15V, 47A | 326 ns | PT | 30V | 143A | 6V | 400V, 47A, 4.7 Ω, 15V | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | ||||||||||||||||||||||||
APT36GA60BD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | POWER MOS 8™ | Active | 1 (Unlimited) | 3 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 290W | 290W | 1 | COLLECTOR | N-CHANNEL | Single | 65A | 600V | 600V | POWER CONTROL | SILICON | 29 ns | 2.5V @ 15V, 20A | 262 ns | PT | 30V | 6V | 400V, 20A, 10 Ω, 15V | 18nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | ||||||||||||||||||||||||||||||||
APT33GF120B2RDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 64A | No | 3 | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 357W | 1 | COLLECTOR | N-CHANNEL | Single | 64A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 31 ns | 3V @ 15V, 25A | 355 ns | NPT | 1200V | 6.5V | 800V, 25A, 4.3 Ω, 15V | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | |||||||||||||||||||||||||||||
APT45GP120BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | 21.46mm | RoHS Compliant | Lead Free | 100A | No | LOW CONDUCTION LOSS | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | 1.2kV | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | 625W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.3V | 47 ns | 3.9V @ 15V, 45A | 230 ns | PT | 1200V | 100A | 600V, 45A, 5 Ω, 15V | 185nC | 170A | 18ns/102ns | 900μJ (on), 904μJ (off) | ||||||||||||||||||||||
APT25GR120SD15 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Surface Mount | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 16 ns | 75A | 1.2kV | 3.2V | 122 ns | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | |||||||||||||||||||||||||||||||||||||||
APT64GA90B2D30 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 29 Weeks | Through Hole | Tube | POWER MOS 8™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | R-PSIP-T3 | 500W | 500W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 117A | 900V | 900V | POWER CONTROL | SILICON | 44 ns | 3.1V @ 15V, 38A | 352 ns | PT | 600V, 38A, 4.7 Ω, 15V | 162nC | 193A | 18ns/131ns | 1192μJ (on), 1088μJ (off) | |||||||||||||||||||||||||||||||
APT50GS60BRDQ2G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Tube | 1999 | Thunderbolt IGBT® | no | Active | 1 (Unlimited) | 21.46mm | RoHS Compliant | Lead Free | No | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | 415W | Single | 25 ns | 93A | 600V | 600V | 2.8V | 3.15V @ 15V, 50A | NPT | 93A | 400V, 40A, 4.7 Ω, 15V | 235nC | 195A | 16ns/225ns | 755μJ (off) |
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