All Products
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RF/IF & RFID
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- Filters
Nexperia USA Inc.(11120)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Material | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Color | Diameter | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Plating | Case Connection | Wire Gauge (Max) | Wire Gauge (Min) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMZ370UNEYL | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | SC-101, SOT-883 | 370mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | 3 | R-PBCC-N3 | IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 360mW Ta 2.7W Tc | 900mA | SWITCHING | 30V | SILICON | N-Channel | 490m Ω @ 500mA, 4.5V | 1.05V @ 250μA | 78pF @ 25V | 1.16nC @ 4.5V | 0.9A | 900mA Ta | 30V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV90ENER | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PDSO-G3 | IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 460mW Ta | SWITCHING | 0.072Ohm | 30V | SILICON | N-Channel | 72m Ω @ 3A, 10V | 2.5V @ 250μA | 160pF @ 15V | 5.5nC @ 10V | 3A | 3A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB1200UPEYL | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Cut Tape (CT) | 2015 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | 3-XFDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | 3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 310mW Ta 1.67W Tc | 410mA | SWITCHING | SILICON | P-Channel | 1.4 Ω @ 410mA, 4.5V | 950mV @ 250μA | 43.2pF @ 15V | 1.2nC @ 4.5V | 0.41A | 410mA Ta | 30V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB370UNE,315 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tape & Reel (TR) | 2012 | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | Tin | No | 3 | 3-XFDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | 3 | YES | 1 | DRAIN | Single | 715mW | 11 ns | 30V | 360mW Ta 2.7W Tc | 900mA | SWITCHING | 0.49Ohm | 54 ns | SILICON | N-Channel | 490m Ω @ 500mA, 4.5V | 1.05V @ 250μA | 78pF @ 25V | 1.16nC @ 15V | 9ns | 27 ns | 8V | 30V | 0.9A | 900mA Ta | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMK50XP,518 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchMOS™ | Obsolete | 2 (1 Year) | 150°C | -55°C | RoHS Compliant | Gold | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Single | 5W | 8.5 ns | -20V | 50mOhm | 8-SO | 5W Tc | 7.9A | 82 ns | P-Channel | 50mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 1020pF @ 20V | 10nC @ 4.5V | 7.5ns | 35 ns | 12V | -20V | 7.9A Tc | 20V | 1.02nF | 4.5V | ±12V | 10 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB75UPEZ | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3-XDFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PDSO-N3 | IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 317mW Ta 8.33W Tc | 2.9A | SWITCHING | 0.085Ohm | 20V | SILICON | P-Channel | 85m Ω @ 2.9A, 4.5V | 1V @ 250μA | 608pF @ 10V | 12nC @ 4.5V | 2.9A Ta | 20V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB120EPEZ | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | ROHS3 Compliant | Tin | No | 3 | 3-XDFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 3 | 4 ns | -30V | 400mW Ta 8.3W Tc | 2.4A | 16 ns | P-Channel | 120m Ω @ 2.4A, 10V | 2.5V @ 250μA | 309pF @ 15V | 11nC @ 10V | 11ns | 7 ns | 20V | 2.4A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV50UPE,215 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3 | 400 ns | -20V | 500mW Ta | 3.2A | 2.18 μs | P-Channel | 66m Ω @ 3.2A, 4.5V | 900mV @ 250μA | 24pF @ 10V | 15.7nC @ 4.5V | 700ns | 8.8 μs | 8V | 3.2A Ta | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ600UNELYL | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | SC-101, SOT-883 | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | BOTTOM | NO LEAD | 3 | R-PBCC-N3 | IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.7W Tc | 600mA | SWITCHING | 3Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | SILICON | N-Channel | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 21.3pF @ 10V | 0.7nC @ 4.5V | Standard | 0.6A | 600mA Tc | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R0-40PS,127 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2009 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | NO | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 86W Tc | SWITCHING | 0.0076Ohm | 40V | SILICON | N-Channel | 7.6m Ω @ 25A, 10V | 4V @ 1mA | 1262pF @ 12V | 21nC @ 10V | 77A | 77A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E3R5-60E,127 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2012 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | NO | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 293W | 28 ns | 60V | 293W Tc | 120A | SWITCHING | 68 ns | SILICON | N-Channel | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 8920pF @ 25V | 114nC @ 10V | 45ns | 49 ns | 20V | 120A Tc | 785A | 404 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMCM4401VPEZ | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | ROHS3 Compliant | Tin | 4 | 4-XFBGA, WLCSP | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 4.8 ns | 400mW Ta 12.5W Tc | 3.9A | 25.1 ns | P-Channel | 65m Ω @ 3A, 4.5V | 900mV @ 250μA | 415pF @ 6V | 10nC @ 4.5V | 24.7ns | 16.5 ns | 12V | 3.9A Ta | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6210-55C,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | 1 (Unlimited) | ROHS3 Compliant | Lead Free | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 3 | Single | 128W | 16 ns | 55V | 128W Tc | 78A | 130 ns | N-Channel | 9.6m Ω @ 15A, 10V | 2.8V @ 1mA | 4000pF @ 25V | 63nC @ 10V | 45ns | 74 ns | 20V | 55V | 78A Tc | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV65UNER | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PDSO-G3 | IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 490mW Ta | SWITCHING | 0.073Ohm | 20V | SILICON | N-Channel | 73m Ω @ 2.8A, 4.5V | 1V @ 250μA | 291pF @ 10V | 6nC @ 10V | 2.8A | 2.8A Ta | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E13-60E,127 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2012 | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | 2.299997g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | NO | 1 | 1 | DRAIN | Single | 10.8 ns | 60V | 96W Tc | 58A | SWITCHING | 21.9 ns | SILICON | N-Channel | 13m Ω @ 15A, 10V | 4V @ 1mA | 1730pF @ 25V | 22.9nC @ 10V | 9.2ns | 9.8 ns | 20V | 58A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R7-30BL,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 245 | 30 | 3 | YES | R-PSSO-G2 | 1 | DRAIN | Single | 170W | 46 ns | 30V | 170W Tc | 100A | SWITCHING | 74 ns | SILICON | N-Channel | 3m Ω @ 25A, 10V | 2.15V @ 1mA | 3954pF @ 15V | 66nC @ 10V | 82ns | 35 ns | 20V | 30V | 100A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30BL,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 3 | YES | R-PSSO-G2 | 1 | DRAIN | Single | 270W | 92 ns | 30V | 270W Tc | 100A | SWITCHING | 0.0021Ohm | 135 ns | SILICON | N-Channel | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 10180pF @ 15V | 170nC @ 10V | 156ns | 69 ns | 20V | 30V | 100A Tc | 1120A | 1.1 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R5-60PLQ | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2012 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 3 | NO | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 349W | 60V | 349W Tc | 150A | SWITCHING | 224 ns | SILICON | N-Channel | 2.6m Ω @ 25A, 10V | 2.1V @ 1mA | 223nC @ 10V | 119ns | 128 ns | 20V | 60V | 150A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R5-30YLC,115 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | No | 5 | HIGH RELIABILITY | SC-100, SOT-669 | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 61W | 17.2 ns | 1.54V | 61W Tc | 84A | SWITCHING | 24.3 ns | SILICON | N-Channel | 4.8m Ω @ 20A, 10V | 1.95V @ 1mA | 1324pF @ 15V | 20.5nC @ 10V | 18.7ns | 8.75 ns | 20V | 30V | 84A Tc | 336A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK9637-100E,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Brass, Metal | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 2 | Crimp | Black | 12.7mm | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 15.875mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 3 | YES | R-PSSO-G2 | 1 | 1 | Gold | DRAIN | 28 AWG | 24 AWG | Single | 14.8 ns | 100V | 96W Tc | 31A | SWITCHING | 33.7 ns | N-Channel | 36m Ω @ 10A, 10V | 2.1V @ 1mA | 2681pF @ 25V | 22.8nC @ 5V | 44.1ns | 35.1 ns | 15V | 100V | 31A Tc | 44 mJ | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| BUK7611-55B,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.75 | e3 | GULL WING | 3 | YES | R-PSSO-G2 | 1 | DRAIN | Single | 157W | 11 ns | 55V | 157W Tc | 84A | SWITCHING | 0.011Ohm | 41 ns | SILICON | N-Channel | 11m Ω @ 25A, 10V | 4V @ 1mA | 2604pF @ 25V | 37nC @ 10V | 45ns | 27 ns | 20V | 55V | 75A | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK9237-55A,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 3 | YES | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 77W | 6 ns | 55V | 77W Tc | 32A | SWITCHING | 95 ns | SILICON | N-Channel | 33m Ω @ 15A, 10V | 2V @ 1mA | 1236pF @ 25V | 17.6nC @ 5V | 36ns | 73 ns | 15V | 55V | 32A Tc | 76 mJ | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7M19-60EX | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | SOT-1210, 8-LFPAK33 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PSSO-G4 | AEC-Q101; IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W Tc | 35.8A | SWITCHING | 0.019Ohm | 60V | SILICON | N-Channel | 19m Ω @ 10A, 10V | 4V @ 1mA | 1055pF @ 25V | 17.3nC @ 10V | 36A | 35.8A Tc | 60V | 143A | 21.1 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9245-55A,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 70W | 10 ns | 55V | 70W Tc | 175mA | SWITCHING | 0.05Ohm | 38 ns | SILICON | N-Channel | 40m Ω @ 5A, 10V | 2V @ 1mA | 1006pF @ 25V | 14nC @ 5V | 132ns | 112 ns | 15V | 55V | 28A | 28A Tc | 62 mJ | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| BUK7230-55A,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.75 | e3 | GULL WING | 3 | R-PSSO-G2 | 1 | DRAIN | Single | 88W | 14 ns | 55V | 88W Tc | 710mA | SWITCHING | 83 ns | SILICON | N-Channel | 30m Ω @ 25A, 10V | 4V @ 1mA | 1152pF @ 25V | 68ns | 43 ns | 20V | 55V | 38A Tc | 150A | 58 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PHD20N06T,118 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2009 | TrenchMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 51W Tc | SWITCHING | 0.077Ohm | 55V | SILICON | N-Channel | 77m Ω @ 10A, 10V | 4V @ 1mA | 422pF @ 25V | 11nC @ 10V | 18A | 18A Tc | 55V | 73A | 36 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PMV100ENEAR | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PDSO-G3 | AEC-Q101; IEC-60134 | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 460mW Ta 4.5W Tc | 3A | SWITCHING | 0.072Ohm | 30V | SILICON | N-Channel | 72m Ω @ 3A, 10V | 2.5V @ 250μA | 160pF @ 15V | 5.5nC @ 10V | 3A | 3A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK78150-55A/CUF | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchMOS™ | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Tin | 4 | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3 ns | 8W Tc | 5.5A | SWITCHING | 0.15Ohm | 55V | 8 ns | SILICON | N-Channel | 150m Ω @ 5A, 10V | 4V @ 1mA | 230pF @ 25V | 26ns | 10 ns | 20V | 5.5A Tc | 55V | 22A | 25 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMPB48EP,115 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 6 | ROHS3 Compliant | 6 | 6-UDFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 6 | YES | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | -30V | 1.7W Ta 12.5W Tc | 4.7A | SWITCHING | 0.05Ohm | SILICON | P-Channel | 50m Ω @ 4.7A, 10V | 2.5V @ 250μA | 860pF @ 15V | 26nC @ 10V | 4.7A Ta | 30V | 19A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN009-100P,127 | Nexperia USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2011 | TrenchMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | 25.4mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | 6.35mm | 6.35mm | Through Hole | 453.59237mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Tin (Sn) | 3 | NO | 1 | DRAIN | Single | 230W | 38 ns | 100V | 230W Tc | 75A | SWITCHING | 0.0088Ohm | 120 ns | SILICON | N-Channel | 8.8m Ω @ 25A, 10V | 4V @ 1mA | 8250pF @ 25V | 156nC @ 10V | 59ns | 43 ns | 20V | 100V | 75A Tc | 400A | 120 mJ | 10V | ±20V |