Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Packaging | Published | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | RoHS Status | Voltage - Rated | Additional Feature | Package / Case | Reach Compliance Code | Frequency | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Gain | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Current Rating (Amps) | Polarity/Channel Type | Power Dissipation-Max (Abs) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Source Url Status Check Date | Transistor Element Material | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Current - Test | Transistor Type | Voltage - Test | Highest Frequency Band | Noise Figure | Power - Output |
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A2T21H450W19SR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Not For New Designs | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-1230S-4S4S | 2.11GHz~2.2GHz | 260 | 40 | 15.7dB | 10μA | 800mA | LDMOS | 30V | 390W | ||||||||||||||||||||||||||||||||||||
MMRF1020-04GNR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2005 | Active | 3 (168 Hours) | 4 | EAR99 | ROHS3 Compliant | 105V | OM-780G-4L | 920MHz | ENHANCEMENT MODE | 8541.29.00.75 | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | YES | R-PDSO-G4 | 19.5dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 105V | METAL-OXIDE SEMICONDUCTOR | SILICON | 860mA | LDMOS (Dual) | 48V | 100W | ||||||||||||||||||||||
MRFE6VP8600HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2011 | Active | Not Applicable | 4 | EAR99 | ROHS3 Compliant | 130V | NI-1230S | 860MHz | ENHANCEMENT MODE | 8541.29.00.75 | FLAT | 260 | 40 | MRFE6VP8600 | YES | R-CDFP-F4 | 150°C | FET General Purpose Power | Not Qualified | 19.3dB | 2 | COMMON SOURCE, 2 ELEMENTS | SOURCE | N-CHANNEL | 1052W | AMPLIFIER | 130V | METAL-OXIDE SEMICONDUCTOR | SILICON | 1.4A | LDMOS (Dual) | 50V | 125W | |||||||||||||||||||
A2T21S260-12SR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-780-2S2L | 2.17GHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 18.7dB | 1.2A | LDMOS | 28V | 65W | ||||||||||||||||||||||||||||||||||||
MMRF1008GHR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2015 | Active | Not Applicable | ROHS3 Compliant | 100V | NI-780GH-2L | 900MHz~1.215GHz | 260 | 40 | 20.3dB | 100μA | 100mA | LDMOS | 50V | 275W | ||||||||||||||||||||||||||||||||||||||
MMRF1023HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2013 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-1230-4LS2L | 2.3GHz | NOT SPECIFIED | NOT SPECIFIED | 14.9dB | 750mA | LDMOS | 28V | 66W | |||||||||||||||||||||||||||||||||||||
AFT18P350-4S2LR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
10 Weeks | Tape & Reel (TR) | 2006 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 65V | NI-1230-4LS2L | 1.81GHz | 260 | 40 | 150°C | FET General Purpose Power | 16.1dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1A | LDMOS (Dual) | 28V | 63W | |||||||||||||||||||||||||||||||||
MRF6V14300HR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2010 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 100V | SOT-957A | 1.4GHz | 8541.29.00.75 | 260 | 40 | MRF6V14300 | 225°C | FET General Purpose Power | 18dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 150mA | LDMOS | 50V | 330W | ||||||||||||||||||||||||||||||
MRF6V12500HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2010 | Active | Not Applicable | 2 | EAR99 | ROHS3 Compliant | 110V | NI-780S | 1.03GHz | ENHANCEMENT MODE | 8541.29.00.75 | DUAL | FLAT | 260 | 40 | MRF6V12500 | YES | R-CDFP-F2 | 225°C | FET General Purpose Power | Not Qualified | 19.7dB | 1 | SINGLE | SOURCE | N-CHANNEL | AMPLIFIER | 110V | METAL-OXIDE SEMICONDUCTOR | SILICON | 200mA | LDMOS | 50V | 500W | ||||||||||||||||||
AFV121KHSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2012 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 112V | NI-1230-4S | 960MHz~1.22GHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 19.6dB | 100mA | LDMOS (Dual) | 50V | 1000W | ||||||||||||||||||||||||||||||||||||
AFV121KGSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2015 | Active | Not Applicable | EAR99 | ROHS3 Compliant | 112V | NI-1230-4S GW | 960MHz~1.22GHz | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 19.6dB | 100mA | LDMOS (Dual) | 50V | 1000W | ||||||||||||||||||||||||||||||||||||
BF1205,135 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2003 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 10V | 6-TSSOP, SC-88, SOT-363 | unknown | 800MHz | BF1205 | 6 | 35dB | 30mA | 2013-06-14 00:00:00 | 12mA | N-Channel Dual Gate | 5V | 1.2dB | ||||||||||||||||||||||||||||||||||||
BF996S,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 1996 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 20V | TO-253-4, TO-253AA | 200MHz | DUAL GATE, DEPLETION MODE | 8541.21.00.75 | e3 | Tin (Sn) | GULL WING | 260 | 40 | BF996 | 4 | YES | R-PDSO-G4 | 150°C | FET General Purpose Powers | Not Qualified | 25dB | 1 | SINGLE WITH BUILT-IN DIODE | SOURCE | 30mA | 0.2W | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | SILICON | 0.03A | 10mA | N-Channel Dual Gate | 15V | 1dB | ||||||||||||||
BF1216,115 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 6V | 6-TSSOP, SC-88, SOT-363 | 400MHz | BF1216 | 6 | 30dB | 30mA | 2013-06-14 00:00:00 | 19mA | N-Channel Dual Gate | 5V | 1dB | |||||||||||||||||||||||||||||||||||||
BF909WR,115 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1995 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 7V | LOW NOISE | SC-82A, SOT-343 | unknown | 800MHz | DUAL GATE, ENHANCEMENT MODE | 8541.21.00.75 | e3 | Tin (Sn) | GULL WING | 260 | 40 | BF909 | 4 | YES | R-PDSO-G4 | 150°C | FET General Purpose Power | Not Qualified | 2 | COMPLEX | SOURCE | 40mA | AMPLIFIER | 7V | METAL-OXIDE SEMICONDUCTOR | SILICON | 0.04A | 0.05 pF | 15mA | N-Channel Dual Gate | 5V | 2dB | ||||||||||||||
BF861A,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 25V | LOW NOISE | TO-236-3, SC-59, SOT-23-3 | DEPLETION MODE | 8541.21.00.95 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 40 | BF861 | 3 | YES | R-PDSO-G3 | 150°C | Other Transistors | Not Qualified | 1 | SINGLE | TO-236AB | 6.5mA | 0.25W | AMPLIFIER | 25V | JUNCTION | SILICON | 2.7 pF | N-Channel JFET | |||||||||||||||||
BSS83,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1997 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 10V | TO-253-4, TO-253AA | 4 | 50mA | 2013-06-14 00:00:00 | N-Channel | |||||||||||||||||||||||||||||||||||||||||||
BSS83,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1997 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 10V | TO-253-4, TO-253AA | ENHANCEMENT MODE | 8541.21.00.95 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 40 | 4 | YES | R-PDSO-G4 | 125°C | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | SUBSTRATE | 50mA | 0.23W | SWITCHING | 120Ohm | 10V | METAL-OXIDE SEMICONDUCTOR | SILICON | 0.05A | N-Channel | |||||||||||||||||||
BF904R,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1999 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 7V | SOT-143R | 200MHz | BF904 | 4 | 30mA | 2013-06-14 00:00:00 | 10mA | N-Channel Dual Gate | 5V | 1dB | ||||||||||||||||||||||||||||||||||||||
BF1102R,135 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 7V | 6-TSSOP, SC-88, SOT-363 | unknown | 800MHz | BF1102 | 6 | 40mA | 2013-06-14 00:00:00 | 15mA | N-Channel Dual Gate | 5V | 2dB | |||||||||||||||||||||||||||||||||||||
BF1205C,115 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 6V | 6-TSSOP, SC-88, SOT-363 | 400MHz | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | BF1205 | 6 | YES | R-PDSO-G6 | 150°C | FET General Purpose Power | Not Qualified | 30dB | 2 | COMPLEX | 30mA | 0.18W | SWITCHING | 6V | METAL-OXIDE SEMICONDUCTOR | 2013-06-14 00:00:00 | SILICON | 0.03A | 19mA | N-Channel Dual Gate | 5V | 1.3dB | ||||||||||||||||
BF545A,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tape & Reel (TR) | 2001 | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | 30V | TO-236-3, SC-59, SOT-23-3 | DEPLETION MODE | 8541.21.00.75 | e3 | TIN | DUAL | GULL WING | 260 | NOT SPECIFIED | BF545 | 3 | YES | R-PDSO-G3 | 150°C | Other Transistors | Not Qualified | 1 | SINGLE | TO-236AB | 6.5mA | 0.25W | AMPLIFIER | 30V | JUNCTION | SILICON | N-Channel JFET | VERY HIGH FREQUENCY B | |||||||||||||||||||
BF998R,235 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1996 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 12V | SOT-143R | 200MHz | BF998 | 4 | 30mA | 2013-06-14 00:00:00 | 10mA | N-Channel Dual Gate | 8V | 0.6dB | ||||||||||||||||||||||||||||||||||||||
BF1211,215 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2003 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 6V | LOW NOISE | TO-253-4, TO-253AA | unknown | 400MHz | DUAL GATE, ENHANCEMENT MODE | 8541.21.00.75 | e3 | Tin (Sn) | GULL WING | 260 | 40 | BF1211 | 4 | YES | R-PDSO-G4 | 150°C | FET General Purpose Power | Not Qualified | 29dB | 2 | COMPLEX | SOURCE | 30mA | 0.18W | AMPLIFIER | 6V | METAL-OXIDE SEMICONDUCTOR | SILICON | 0.03A | 0.03 pF | 15mA | N-Channel Dual Gate | 5V | 0.9dB | ||||||||||||
MRF8S23120HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 65V | NI-780S | 2.3GHz | MRF8S23120 | 16dB | 800mA | LDMOS | 28V | 28W | |||||||||||||||||||||||||||||||||||||||||
MRF8P8300HSR5 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2011 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 70V | NI-1230S | 820MHz | MRF8P8300 | 20.9dB | 2A | LDMOS (Dual) | 28V | 96W | |||||||||||||||||||||||||||||||||||||||||
MRFE6VP8600HSR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 130V | NI-1230S | unknown | 860MHz | MRFE6VP8600 | 19.3dB | 1.4A | LDMOS (Dual) | 50V | 125W | |||||||||||||||||||||||||||||||||||||||
MRF8S21140HSR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 5A991 | ROHS3 Compliant | 65V | NI-780S | 2.14GHz | 8541.29.00.75 | MRF8S21140 | 17.9dB | 970mA | LDMOS | 28V | 34W | |||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HSR6 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2011 | Discontinued | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 130V | NI-1230-4S | 230MHz | MRFE6VP5600 | 25dB | 100mA | LDMOS (Dual) | 50V | 600W | ||||||||||||||||||||||||||||||||||||||||
MRF6V13250HR3 | NXP USA Inc. | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2011 | Discontinued | 3 (168 Hours) | EAR99 | ROHS3 Compliant | 120V | SOT-957A | 1.3GHz | MRF6V13250 | 22.7dB | 100mA | LDMOS | 50V | 250W |
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