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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Voltage - Rated Package / Case Reach Compliance Code Frequency Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Number of Elements Configuration Case Connection Current Rating (Amps) Polarity/Channel Type Power Dissipation-Max (Abs) RF/Microwave Device Type Transistor Application DS Breakdown Voltage-Min FET Technology Transistor Element Material Drain Current-Max (Abs) (ID) Current - Test Transistor Type Voltage - Test Power - Output
AFT09MS007NT1 AFT09MS007NT1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2006 Active 3 (168 Hours) EAR99 ROHS3 Compliant 30V PLD-1.5W 870MHz 8541.29.00.40 e3 Matte Tin (Sn) 260 40 YES 150°C FET General Purpose Power 15.2dB Single N-CHANNEL 182W METAL-OXIDE SEMICONDUCTOR 100mA LDMOS 7.5V 7.3W
A2T27S007NT1 A2T27S007NT1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) Active 3 (168 Hours) 28V 16-VDFN Exposed Pad 728MHz~3.6GHz LDMOS 28.8dBm
AFT20P060-4NR3 AFT20P060-4NR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2006 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM780-4 2.17GHz 8541.29.00.40 e3 Matte Tin (Sn) 260 40 225°C FET General Purpose Power 18.9dB Single N-CHANNEL METAL-OXIDE SEMICONDUCTOR 450mA LDMOS (Dual) 28V 6.3W
MMRF1015GNR1 MMRF1015GNR1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2014 Active 3 (168 Hours) EAR99 ROHS3 Compliant 68V TO-270BA 960MHz 8541.29.00.75 e3 Tin (Sn) 260 40 18dB 125mA LDMOS 28V 10W
MRF8P9040GNR1 MRF8P9040GNR1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2006 Not For New Designs 3 (168 Hours) 4 EAR99 ROHS3 Compliant 70V TO-270BB 960MHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) GULL WING 260 40 YES R-PDFM-G4 225°C FET General Purpose Power Not Qualified 19.1dB 2 COMMON SOURCE, 2 ELEMENTS SOURCE N-CHANNEL AMPLIFIER 70V METAL-OXIDE SEMICONDUCTOR SILICON 320mA LDMOS (Dual) 28V 4W
MRF1535FNT1 MRF1535FNT1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2001 Not For New Designs 3 (168 Hours) 6 EAR99 ROHS3 Compliant 40V TO-272BA 520MHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 MRF1535 YES R-PDFM-F6 200°C FET General Purpose Power Not Qualified 13.5dB 1 SINGLE SOURCE 6A N-CHANNEL 135W AMPLIFIER 40V METAL-OXIDE SEMICONDUCTOR SILICON 6A 500mA LDMOS 12.5V 35W
A2T27S020NR1 A2T27S020NR1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2006 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V TO-270-2 400MHz~2.7GHz NOT SPECIFIED NOT SPECIFIED 21dB 10μA 185mA LDMOS 28V 20W
MRF6S20010NR1 MRF6S20010NR1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2005 Not For New Designs 3 (168 Hours) 2 EAR99 ROHS3 Compliant 68V TO-270AA 2.17GHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 MRF6S20010 YES R-PDFM-F2 225°C FET General Purpose Power Not Qualified 15.5dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 68V METAL-OXIDE SEMICONDUCTOR SILICON 130mA LDMOS 28V 10W
AFIC31025NR1 AFIC31025NR1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2017 Active 3 (168 Hours) ROHS3 Compliant 32V TO-270-17 Variant, Flat Leads 2.7GHz~3.1GHz 30dB NARROW BAND HIGH POWER LDMOS 25W
MMRF2005NR1 MMRF2005NR1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2010 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V TO-270-16 Variant, Flat Leads 940MHz 8542.33.00.01 e3 Tin (Sn) 35.9dB NARROW BAND HIGH POWER 106mA LDMOS 28V 3.2W
A2T21H141W24SR3 A2T21H141W24SR3 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) Active Not Applicable ROHS3 Compliant 260 40
A2I25H060GNR1 A2I25H060GNR1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2009 yes Active 3 (168 Hours) ROHS3 Compliant 65V TO-270-17 Variant, Gull Wing not_compliant 2.59GHz 26.1dB 26mA LDMOS (Dual) 28V 10.5W
MMRF1018NBR1 MMRF1018NBR1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2014 Active 3 (168 Hours) EAR99 ROHS3 Compliant 120V TO-272-4 860MHz 8541.29.00.75 e3 Tin (Sn) 260 40 22dB 350mA LDMOS 50V 18W
MMRF2007GNR1 MMRF2007GNR1 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2010 Active 3 (168 Hours) EAR99 ROHS3 Compliant 8542.33 WIDE BAND HIGH POWER
A2T21S260W12NR3 A2T21S260W12NR3 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2006 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM-880X-2L2L 2.11GHz~2.2GHz 260 40 17.9dB 10μA 1.6A LDMOS 28V 218W
A2T20H160W04NR3 A2T20H160W04NR3 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM780-4 1.88GHz~2.025GHz 260 40 17dB 10μA 400mA LDMOS (Dual) 28V 200W
MRFE6S9125NR1 MRFE6S9125NR1 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2006 Not For New Designs 3 (168 Hours) 4 EAR99 ROHS3 Compliant 66V TO-270AB 880MHz ENHANCEMENT MODE 8541.29.00.75 e3 Matte Tin (Sn) DUAL FLAT 260 40 MRFE6S9125 YES R-PDFP-F4 225°C FET General Purpose Power Not Qualified 20.2dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 66V METAL-OXIDE SEMICONDUCTOR SILICON 950mA LDMOS 28V 27W
MHT1004NR3 MHT1004NR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM-780-2 2.45GHz NOT SPECIFIED NOT SPECIFIED 15.2dB 10μA 100mA LDMOS 32V 280W
A2T20H330W24NR6 A2T20H330W24NR6 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2009 Last Time Buy 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM-1230-4L2L 1.88GHz~2.025GHz 260 40 15.9dB 10μA 700mA LDMOS 28V 229W
A2T21H360-23NR6 A2T21H360-23NR6 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2006 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM-1230-4L2L 2.11GHz~2.2GHz 260 40 16.8dB 10μA 500mA LDMOS (Dual) 28V 373W
AFT09S282NR3 AFT09S282NR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2012 Active 3 (168 Hours) EAR99 ROHS3 Compliant 70V OM-780-2 960MHz 8541.29.00.40 e3 Matte Tin (Sn) 260 40 150°C FET General Purpose Power 20dB Single N-CHANNEL METAL-OXIDE SEMICONDUCTOR 1.4A LDMOS 28V 80W
A3T19H455W23SR6 A3T19H455W23SR6 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) Active Not Applicable ROHS3 Compliant 65V ACP-1230S-4L2S 1.93GHz~1.99GHz 260 40 16.4dB 10μA 540mA LDMOS (Dual) 30V 81W
AFT18S290-13SR3 AFT18S290-13SR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2006 Active Not Applicable EAR99 ROHS3 Compliant 65V NI-880XS-2L4S 1.96GHz 8541.29.00.40 18.2dB 2A LDMOS 28V 63W
AFT18S230-12NR3 AFT18S230-12NR3 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2009 Active 3 (168 Hours) EAR99 ROHS3 Compliant 65V OM-780-2L2L 1.88GHz 8541.29.00.75 260 40 17.6dB 1.4A LDMOS 28V 50W
AFT21S220W02SR3 AFT21S220W02SR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2013 Not For New Designs Not Applicable EAR99 ROHS3 Compliant 65V NI-780S 2.14GHz 8541.29.00.75 260 40 19.1dB 1.2A LDMOS 28V 50W
AFT26H200W03SR6 AFT26H200W03SR6 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2006 Not For New Designs Not Applicable EAR99 ROHS3 Compliant 65V NI-1230-4S 2.5GHz 8541.29.00.40 260 40 225°C FET General Purpose Power 14.1dB Single N-CHANNEL METAL-OXIDE SEMICONDUCTOR 500mA LDMOS 28V 45W
MMRF1310HSR5 MMRF1310HSR5 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2007 Active Not Applicable EAR99 ROHS3 Compliant 133V NI-780S-4 230MHz 8541.29.00.75 260 40 26.5dB 100mA LDMOS (Dual) 50V 300W
AFT09S200W02NR3 AFT09S200W02NR3 NXP USA Inc. $0.00
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10 Weeks Tape & Reel (TR) 2009 Not For New Designs 3 (168 Hours) 2 EAR99 ROHS3 Compliant 70V OM-780-2 960MHz ENHANCEMENT MODE 8541.29.00.40 e3 Tin (Sn) DUAL FLAT 260 40 YES R-PDFP-F2 19.2dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 70V METAL-OXIDE SEMICONDUCTOR SILICON 1.4A LDMOS 28V 56W
AFT23H160-25SR3 AFT23H160-25SR3 NXP USA Inc. $0.00
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download 10 Weeks Tape & Reel (TR) 2006 Active Not Applicable EAR99 ROHS3 Compliant 65V NI-880X-4L4S-8 2.3GHz 8541.29.00.75 NOT SPECIFIED NOT SPECIFIED 16.7dB 450mA LDMOS (Dual) 28V 32W
A2G22S190-01SR3 A2G22S190-01SR3 NXP USA Inc. $0.00
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download 16 Weeks Tape & Reel (TR) Active Not Applicable ROHS3 Compliant 260 40