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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQPF6N80C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 10 hours ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 5.5A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | 2.5Ohm | Through Hole | 2.27g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 51W | 26 ns | 5V | 51W Tc | 5.5A | SWITCHING | 47 ns | SILICON | N-Channel | 2.5 Ω @ 2.75A, 10V | 5V @ 250μA | 1310pF @ 25V | 30nC @ 10V | 65ns | 44 ns | 30V | 800V | 5.5A Tc | 22A | 680 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| HUF75339P3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 75A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 12mOhm | Through Hole | 1.8g | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 200W | 15 ns | 4V | 200W Tc | 75A | SWITCHING | 20 ns | SILICON | N-Channel | 12m Ω @ 75A, 10V | 4V @ 250μA | 2000pF @ 25V | 130nC @ 20V | 60ns | 25 ns | 20V | 55V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FQA9P25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | -10.5A | No | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | 620MOhm | Through Hole | 6.401g | -55°C~150°C TJ | -250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | Other Transistors | 1 | Single | 150W | 20 ns | 150W Tc | 10.5A | SWITCHING | 45 ns | SILICON | P-Channel | 620m Ω @ 5.25A, 10V | 5V @ 250μA | 1180pF @ 25V | 38nC @ 10V | 150ns | 65 ns | 30V | -250V | 10.5A Tc | 250V | 42A | 650 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDPF16N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2004 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 15.87mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 38.5W | 40 ns | 5V | 38.5W Tc | 16A | SWITCHING | 65 ns | SILICON | N-Channel | 380m Ω @ 8A, 10V | 5V @ 250μA | 1945pF @ 25V | 45nC @ 10V | 150ns | 80 ns | 30V | 500V | 16A Tc | 64A | 780 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDB088N08 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2004 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.33mm | Surface Mount | 1.31247g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 160W | 45 ns | 2V | 160W Tc | 120A | SWITCHING | 0.0088Ohm | 244 ns | SILICON | N-Channel | 8.8m Ω @ 75A, 10V | 4V @ 250μA | 6595pF @ 25V | 118nC @ 10V | 158ns | 102 ns | 20V | 75V | 85A | 120A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQP9P25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | -9.4A | No | 3 | TO-220-3 | 16.3mm | 4.7mm | 620mOhm | Through Hole | 1.8g | -55°C~150°C TJ | -250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | Other Transistors | 1 | TO-220AB | Single | 120W | 20 ns | 120W Tc | 9.4A | SWITCHING | 45 ns | SILICON | P-Channel | 620m Ω @ 4.7A, 10V | 5V @ 250μA | 1180pF @ 25V | 38nC @ 10V | 150ns | 65 ns | 30V | -250V | 9.4A Tc | 250V | 650 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDP33N25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2004 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 33A | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 94MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 235W | 35 ns | 5V | 235W Tc | 33A | SWITCHING | 75 ns | SILICON | N-Channel | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 2135pF @ 25V | 48nC @ 10V | 230ns | 120 ns | 30V | 250V | 33A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDPF10N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | No SVHC | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 38W | 25 ns | 5V | 38W Tc | 10A | SWITCHING | 0.75Ohm | 70 ns | SILICON | N-Channel | 750m Ω @ 5A, 10V | 5V @ 250μA | 1475pF @ 25V | 30nC @ 10V | 50ns | 50 ns | 25V | 600V | 10A Tc | 40A | 550 mJ | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| FQPF13N50CF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2014 | FRFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 13A | No | 3 | FAST SWITCHING | TO-220-3 Full Pack | No SVHC | 540mOhm | Through Hole | 2.27g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 48W | 25 ns | 4V | 48W Tc | 13A | SWITCHING | 130 ns | SILICON | N-Channel | 540m Ω @ 6.5A, 10V | 4V @ 250μA | 2055pF @ 25V | 56nC @ 10V | 100ns | 100 ns | 30V | 500V | 13A Tc | 52A | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDB045AN08A0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2001 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 19A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.83mm | 11.33mm | 4.5MOhm | Surface Mount | 1.31247g | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 310W | 18 ns | 4V | 310W Tc | 80A | SWITCHING | 40 ns | SILICON | N-Channel | 4.5m Ω @ 80A, 10V | 4V @ 250μA | 6600pF @ 25V | 138nC @ 10V | 88ns | 45 ns | 20V | 75V | 19A Ta 90A Tc | 600 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| NTD4970N-35G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | ACTIVE (Last Updated: 3 days ago) | Bulk | 2012 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Stub Leads, IPak | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | NO | FET General Purpose Power | 1 | DRAIN | Single | 2.55W | 1.38W Ta 24.6W Tc | 11.6A | SWITCHING | SILICON | N-Channel | 11m Ω @ 30A, 10V | 2.5V @ 250μA | 774pF @ 15V | 8.2nC @ 4.5V | 27.6ns | 5.7 ns | 20V | 30V | 8.5A | 8.5A Ta 36A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FCP260N60E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2012 | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 156W | 20 ns | 2.5V | 156W Tc | 15A | 13 ns | N-Channel | 260m Ω @ 7.5A, 10V | 3.5V @ 250μA | 2500pF @ 25V | 62nC @ 10V | 11ns | 13 ns | 20V | 650V | 15A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCPF165N65S3R0L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 4 days ago) | SuperFET® III | yes | Active | Not Applicable | RoHS Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 35W Tc | N-Channel | 165m Ω @ 9.5A, 10V | 4.5V @ 1.9mA | 1415pF @ 400V | 35nC @ 10V | 19A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF190N60E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 9.19mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 39W | 23 ns | 2.5V | 39W Tc | 20.6A | 212 ns | N-Channel | 190m Ω @ 10A, 10V | 3.5V @ 250μA | 3175pF @ 25V | 82nC @ 10V | 38ns | 40 ns | 20V | 650V | 20.6A Tc | 600V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP19N40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 240MOhm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 215W | 31 ns | 215W Tc | 19A | SWITCHING | 82 ns | SILICON | N-Channel | 240m Ω @ 9.5A, 10V | 5V @ 250μA | 2115pF @ 25V | 40nC @ 10V | 70ns | 49 ns | 30V | 400V | 19A Tc | 76A | 542 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQPF10N50CF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | FRFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 10A | No | 3 | FAST SWITCHING | TO-220-3 Full Pack | 610mOhm | Through Hole | 2.27g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 48W | 29 ns | 48W Tc | 10A | 141 ns | SILICON | N-Channel | 610m Ω @ 5A, 10V | 4V @ 250μA | 2096pF @ 25V | 56nC @ 10V | 80ns | 80 ns | 30V | 500V | 10A Tc | 40A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FQP12N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | QFET® | yes | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 12A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 650mOhm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1 | TO-220AB | Single | 225W | 30 ns | 4V | 225W Tc | 12A | SWITCHING | 155 ns | SILICON | N-Channel | 650m Ω @ 6A, 10V | 4V @ 250μA | 2290pF @ 25V | 63nC @ 10V | 85ns | 90 ns | 30V | 600V | 600V | 4 V | 12A Tc | 48A | 870 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||
| FQP13N50C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2013 | QFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 13A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 480mOhm | Through Hole | 4.535924g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 1 | TO-220AB | Single | 195W | 25 ns | 195W Tc | 13A | SWITCHING | 130 ns | SILICON | N-Channel | 480m Ω @ 6.5A, 10V | 4V @ 250μA | 2055pF @ 25V | 56nC @ 10V | 100ns | 100 ns | 30V | 500V | 500V | 4 V | 13A Tc | 52A | 860 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| MCH3478-TL-W | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | 3-SMD, Flat Lead | Surface Mount | 150°C TJ | MOSFET (Metal Oxide) | e6 | 4.4 ns | 800mW Ta | 2A | 16 ns | N-Channel | 165m Ω @ 1A, 4.5V | 130pF @ 10V | 1.7nC @ 4.5V | 8.7ns | 12 ns | 12V | 2A Ta | 30V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVF3055-100T1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | LIFETIME (Last Updated: 1 week ago) | Tape & Reel (TR) | 1999 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.7mm | ROHS3 Compliant | Lead Free | No | 4 | TO-261-4, TO-261AA | 1.65mm | 3.7mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 4 | YES | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 9.4 ns | 1.3W Ta | 3A | SWITCHING | 21 ns | SILICON | N-Channel | 110m Ω @ 1.5A, 10V | 4V @ 250μA | 455pF @ 25V | 22nC @ 10V | 14ns | 13 ns | 20V | 60V | 3A | 3A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BBL4001-1E | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | Copper, Silver, Tin | 3 | TO-220-3 Full Pack | not_compliant | Through Hole | 150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 48 ns | 2W Ta 35W Tc | 74A | 510 ns | N-Channel | 6.1m Ω @ 37A, 10V | 2.6V @ 1mA | 6900pF @ 20V | 135nC @ 10V | 300ns | 340 ns | 20V | 74A Ta | 60V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP5864NG | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | ACTIVE (Last Updated: 1 day ago) | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.28mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | 4.82mm | 15.75mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | NO | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 107W | 10 ns | 107W Tc | 63A | 18 ns | SILICON | N-Channel | 12.4m Ω @ 20A, 10V | 4V @ 250μA | 1680pF @ 25V | 31nC @ 10V | 6.4ns | 4.6 ns | 20V | 60V | 63A Tc | 252A | 80 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTB60N06T4G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Tape & Reel (TR) | 2005 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.29mm | ROHS3 Compliant | Lead Free | Tin | 60A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 16MOhm | Surface Mount | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 40 | 3 | YES | R-PSSO-G2 | FET General Purpose Powers | 1 | DRAIN | Single | 150W | 25.5 ns | 2.85V | 2.4W Ta 150W Tj | 60A | SWITCHING | 94.5 ns | SILICON | N-Channel | 14m Ω @ 30A, 10V | 4V @ 250μA | 3220pF @ 25V | 81nC @ 10V | 180.7ns | 142.5 ns | 20V | 60V | 60A Ta | 454 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
| FQP2N90 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 2.2A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 7.2MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 85W | 15 ns | 5V | 85W Tc | 2.2A | SWITCHING | 20 ns | SILICON | N-Channel | 7.2 Ω @ 1.1A, 10V | 5V @ 250μA | 500pF @ 25V | 15nC @ 10V | 35ns | 30 ns | 30V | 900V | 2.2A Tc | 8.8A | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDPF770N15A | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | ULTRA-LOW RESISTANCE | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 20W | 12 ns | 21W Tc | 10A | SWITCHING | 0.077Ohm | 15 ns | SILICON | N-Channel | 77m Ω @ 10A, 10V | 4V @ 250μA | 765pF @ 75V | 11.2nC @ 10V | 8ns | 3 ns | 20V | 150V | 10A Tc | 40A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF30N06L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 22.5A | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | ISOLATED | Single | 38W | 15 ns | 38W Tc | 22.5A | SWITCHING | 0.045Ohm | 60 ns | SILICON | N-Channel | 35m Ω @ 11.3A, 10V | 2.5V @ 250μA | 1040pF @ 25V | 20nC @ 5V | 210ns | 110 ns | 20V | 60V | 22.5A Tc | 90A | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQP9N30 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 9A | No | 3 | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 98W | 16 ns | 98W Tc | 9A | SWITCHING | 0.45Ohm | 27 ns | SILICON | N-Channel | 450m Ω @ 4.5A, 10V | 5V @ 250μA | 750pF @ 25V | 22nC @ 10V | 120ns | 48 ns | 30V | 300V | 9A | 9A Tc | 420 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQP16N25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 16A | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 50W | 17 ns | 142W Tc | 16A | SWITCHING | 45 ns | SILICON | N-Channel | 230m Ω @ 8A, 10V | 5V @ 250μA | 1200pF @ 25V | 35nC @ 10V | 140ns | 75 ns | 30V | 250V | 16A Tc | 64A | 560 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDP10N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2010 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | 16.07mm | 4.9mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 185W | 25 ns | 3V | 185W Tc | 10A | SWITCHING | 0.75Ohm | 70 ns | SILICON | N-Channel | 750m Ω @ 5A, 10V | 5V @ 250μA | 1475pF @ 25V | 30nC @ 10V | 50ns | 50 ns | 25V | 600V | 10A Tc | 40A | 550 mJ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| HUF76407D3ST | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 11A | No | 3 | TO-252-3 | No SVHC | 92mOhm | 260.37mg | 60V | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 38W | 1 | TO-252AA | DRAIN | N-CHANNEL | Single | 38W | 5 ns | 1V | 77mOhm | 12A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 43 ns | 32ns | 45 ns | 16V | 60V | 60V | 350pF | 92 mΩ |