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1HP04CH-TL-W

MOSFET P-CH 100V 0.17A SOT-23


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-1HP04CH-TL-W
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 261
  • Description: MOSFET P-CH 100V 0.17A SOT-23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 600mW
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 21 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18 Ω @ 80mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 20V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet