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1N5553US

1N5553US datasheet pdf and Diodes - Rectifiers - Single product details from Microsemi Corporation stock available at Feilidi


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-1N5553US
  • Package: SQ-MELF, B
  • Datasheet: PDF
  • Stock: 230
  • Description: 1N5553US datasheet pdf and Diodes - Rectifiers - Single product details from Microsemi Corporation stock available at Feilidi (Kg)

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Details

Tags

Parameters
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A
Case Connection ISOLATED
Forward Current 5A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 5A
Application POWER
Forward Voltage 1.3V
Max Reverse Voltage (DC) 800V
Average Rectified Current 3A
Number of Phases 1
Reverse Recovery Time 2 μs
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 800V
Peak Non-Repetitive Surge Current 100A
Radiation Hardening Yes
RoHS Status Non-RoHS Compliant
Factory Lead Time 7 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
See Relate Datesheet