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2N4401T93

2N4401T93 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2N4401T93
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 883
  • Description: 2N4401T93 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2005
JESD-609 Code e3/e2
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2N4401
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 20
VCEsat-Max 0.75 V
Turn Off Time-Max (toff) 255ns
Turn On Time-Max (ton) 35ns
Collector-Base Capacitance-Max 6.5pF
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet