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2N5401BU

2N5401BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-2N5401BU
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 759
  • Description: 2N5401BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 178.2mg
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -150V
Max Power Dissipation 625mW
Current Rating -600mA
Frequency 400MHz
Base Part Number 2N5401
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Gain Bandwidth Product 300MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 600mA
Max Frequency 400MHz
Frequency - Transition 400MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet