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2N5550

2N5550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-2N5550
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 259
  • Description: 2N5550 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 140V
Max Power Dissipation 625mW
Current Rating 600mA
Base Part Number 2N5550
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 140V
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 600mA
Max Frequency 300MHz
Collector Emitter Saturation Voltage 250mV
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet