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2N6487G

2N6487G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-2N6487G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 228
  • Description: 2N6487G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 1.8W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 5MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6487
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 5MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
See Relate Datesheet