All Products

2N6660-E3

VISHAY 2N6660-E3 MOSFET Transistor, N Channel, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-2N6660-E3
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: PDF
  • Stock: 956
  • Description: VISHAY 2N6660-E3 MOSFET Transistor, N Channel, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 9 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 725mW Ta 6.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 725mW
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 990mA Tc
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.1A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.99A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1.7 V
Height 6.6mm
Length 9.4mm
Width 8.15mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet