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  • 2N6660-E3

2N6660-E3

VISHAY 2N6660-E3 MOSFET Transistor, N Channel, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-2N6660-E3
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: PDF
  • Stock: 956
  • Description: VISHAY 2N6660-E3 MOSFET Transistor, N Channel, 990 mA, 75 V, 1.3 ohm, 10 V, 1.7 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 9 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 725mW Ta 6.25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 725mW
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 3 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 990mA Tc
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.1A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.99A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1.7 V
Height 6.6mm
Length 9.4mm
Width 8.15mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet