Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIS415DNT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Cut Tape (CT) | 2014 | TrenchFET® | Discontinued | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | PowerPAK® 1212-8 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.7W | 3.7W Ta 52W Tc | 35A | SWITCHING | 0.004Ohm | 82 ns | SILICON | P-Channel | 4m Ω @ 20A, 10V | 1.5V @ 250μA | 5460pF @ 10V | 180nC @ 10V | 38ns | 25 ns | -1.5V | -20V | 35A Tc | 20V | 20 mJ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
SI4346DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.55mm | 4mm | 23mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 1.31W | 9 ns | 2V | 1.31W Ta | 8A | SWITCHING | 40 ns | SILICON | N-Channel | 23m Ω @ 8A, 10V | 2V @ 250μA | 10nC @ 4.5V | 11ns | 11 ns | 12V | 30V | 2 V | 5.9A | 5.9A Ta | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
SQ3419EEV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Digi-Reel® | 2013 | TrenchFET® | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 78mOhm | Surface Mount | 19.986414mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 260 | 40 | 6 | 1 | 1 | Single | 5W | 9 ns | -1.5V | 5W Tc | 7.4A | 26 ns | SILICON | P-Channel | 50m Ω @ 2.5A, 10V | 2.5V @ 250μA | 1065pF @ 20V | 15nC @ 4.5V | 8ns | 10 ns | 12V | -40V | 7.4A Tc | 40V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
SUP50N03-5M1P-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2008 | TrenchFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 2.7W | 8 ns | 1V | 2.7W Ta 59.5W Tc | 50A | SWITCHING | 35 ns | SILICON | N-Channel | 5.1m Ω @ 22A, 10V | 2.5V @ 250μA | 2780pF @ 15V | 66nC @ 10V | 9ns | 9 ns | 20V | 50A Tc | 30V | 80 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SUD06N10-225L-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Obsolete | 1 (Unlimited) | 175°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.38mm | 6.22mm | 200mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 20W | 7 ns | 1V | 200mOhm | TO-252, (D-Pak) | 1.25W Ta 20W Tc | 6.5A | 8 ns | N-Channel | 200mOhm @ 3A, 10V | 3V @ 250μA | 240pF @ 25V | 4nC @ 5V | 8ns | 9 ns | 20V | 100V | 1 V | 6.5A Tc | 100V | 240pF | 4.5V 10V | ±20V | 200 mΩ | |||||||||||||||||||||||||||||||||||||||||||
SUD42N03-3M9P-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 2 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 11 ns | 1V | 2.5W Ta 73.5W Tc | 42A | SWITCHING | 0.0039Ohm | 35 ns | SILICON | N-Channel | 3.9m Ω @ 22A, 10V | 2.5V @ 250μA | 3535pF @ 15V | 100nC @ 10V | 10ns | 10 ns | 20V | 30V | 42A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
2N6660-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | Through Hole | Bulk | 2007 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 9.4mm | ROHS3 Compliant | Tin | No | 3 | LOW THRESHOLD | TO-205AD, TO-39-3 Metal Can | Unknown | 6.6mm | 8.15mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | WIRE | 260 | 40 | 2 | 1 | FET General Purpose Powers | 1 | Single | 725mW | 1.7V | 725mW Ta 6.25W Tc | 1.1A | AMPLIFIER | 3Ohm | SILICON | N-Channel | 3 Ω @ 1A, 10V | 2V @ 1mA | 50pF @ 25V | 20V | 60V | 1.7 V | 0.99A | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SIB410DK-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-75-6L | Unknown | Surface Mount | 95.991485mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 6 | S-XDSO-C3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 6 ns | 400mV | 2.5W Ta 13W Tc | 9A | SWITCHING | 0.042Ohm | 20 ns | SILICON | N-Channel | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 560pF @ 15V | 15nC @ 8V | 10ns | 10 ns | 8V | 30V | 9A | 9A Tc | 20A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
SIA533EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 6 | PowerPAK® SC-70-6 Dual | Unknown | 800μm | 34MOhm | Surface Mount | 28.009329mg | -55°C~150°C TJ | ENHANCEMENT MODE | C BEND | NOT SPECIFIED | NOT SPECIFIED | SIA533 | 6 | 2 | Other Transistors | Not Qualified | 7.8W | 2 | DRAIN | N-CHANNEL AND P-CHANNEL | Single | 7.8W | 400mV | 4.5A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | SILICON | N and P-Channel | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 420pF @ 6V | 15nC @ 10V | 8V | 12V | Logic Level Gate | 400 mV | 12V | ||||||||||||||||||||||||||||||||||||||||
SI3932DV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1.1mm | 58MOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | SI3932 | 6 | 2 | FET General Purpose Powers | 1.4W | 2 | Dual | 1.14W | 5 ns | 2.2V | 3.4A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10 ns | SILICON | 2 N-Channel (Dual) | 58m Ω @ 3.4A, 10V | 2.2V @ 250μA | 235pF @ 15V | 6nC @ 10V | 15ns | 10 ns | 20V | 30V | Logic Level Gate | 1.2 V | 3.7A | 3.7A | ||||||||||||||||||||||||||||||||||
SI7232DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 Dual | 1.17mm | 3.05mm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | C BEND | 260 | 30 | SI7232 | 8 | S-XDSO-C6 | FET General Purpose Power | 23W | 2 | DRAIN | 2.6W | 10 ns | 10A | 150°C | SWITCHING | 0.0164Ohm | METAL-OXIDE SEMICONDUCTOR | 35 ns | SILICON | 2 N-Channel (Dual) | 16.4m Ω @ 10A, 4.5V | 1V @ 250μA | 1220pF @ 10V | 32nC @ 8V | 10ns | 10 ns | 8V | 20V | Logic Level Gate | 25A | 40A | 11 mJ | |||||||||||||||||||||||||||||||||||
SI1022R-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 1.58mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOW THRESHOLD | SC-75A | No SVHC | 700μm | 760μm | 3Ohm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 1 | Single | 250mW | 2.5V | 250mW Ta | 330mA | SWITCHING | 60V | SILICON | N-Channel | 1.25 Ω @ 500mA, 10V | 2.5V @ 250μA | 30pF @ 25V | 0.6nC @ 4.5V | 20V | 330mA Ta | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SI2319CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 77mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 1.25W | 40 ns | -2.5V | 1.25W Ta 2.5W Tc | -4.4A | 150°C | SWITCHING | 18 ns | SILICON | P-Channel | 77m Ω @ 3.1A, 10V | 2.5V @ 250μA | 595pF @ 20V | 21nC @ 10V | 20V | -40V | -1.2 V | 4.4A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SQ2319ADS-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 2.5W Tc | P-Channel | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 620pF @ 20V | 16nC @ 10V | 4.6A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4946BEY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.55mm | 4mm | 41MOhm | Surface Mount | 506.605978mg | -55°C~175°C TJ | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | 30 | SI4946 | 8 | 3.7W | 2 | Dual | 2.4W | 10 ns | 2.4V | 5.3A | METAL-OXIDE SEMICONDUCTOR | 25 ns | SILICON | 2 N-Channel (Dual) | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 840pF @ 30V | 25nC @ 10V | 12ns | 10 ns | 20V | 60V | Logic Level Gate | 6.5A | 30A | ||||||||||||||||||||||||||||||||||||||
SI3443DDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 6 | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 260 | 30 | 1 | SINGLE WITH BUILT-IN DIODE | MO-193AA | 27 ns | 1.7W Ta 2.7W Tc | -4A | SWITCHING | 0.047Ohm | 20V | 43 ns | SILICON | P-Channel | 47m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 970pF @ 10V | 30nC @ 8V | 25ns | 18 ns | 12V | 4A | 4A Ta 5.3A Tc | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
SI1062X-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | SC-89, SOT-490 | No SVHC | 420mOhm | Surface Mount | 29.993795mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FLAT | 1 | 1 | Single | 220mW | 2 ns | 1V | 220mW Ta | 530mA | SWITCHING | 16 ns | SILICON | N-Channel | 420m Ω @ 500mA, 4.5V | 1V @ 250μA | 43pF @ 10V | 2.7nC @ 8V | 14ns | 11 ns | 8V | 20V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
SI7123DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.3mm | 10.6mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.5W | 25 ns | -1V | 1.5W Ta | -25A | SWITCHING | 82 ns | SILICON | P-Channel | 10.6m Ω @ 15A, 4.5V | 1V @ 250μA | 3729pF @ 10V | 90nC @ 4.5V | 88ns | 88 ns | 8V | -20V | 10.2A Ta | 20V | 40A | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
SI8802DB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Surface Mount | Digi-Reel® | 2015 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-XFBGA | Unknown | 54mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | BALL | 4 | 1 | FET General Purpose Power | 1 | Single | 500mW | 5 ns | 500mW Ta | 3.5A | SWITCHING | 22 ns | SILICON | N-Channel | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 15ns | 7 ns | 5V | 8V | 350 mV | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
SI5415AEDU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2017 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® ChipFET™ Single | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | Pure Matte Tin (Sn) | 260 | 30 | 1 | Single | 3.1W | 12 ns | 3.1W Ta 31W Tc | 25A | 80 ns | P-Channel | 9.6m Ω @ 10A, 4.5V | 1V @ 250μA | 4300pF @ 10V | 120nC @ 8V | 45ns | 25 ns | 8V | -20V | 25A Tc | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SIRA66DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | PowerPAK® SO-8 | unknown | 1.9mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 62.5W Tc | N-Channel | 2.3m Ω @ 15A, 10V | 2.2V @ 1mA | 66nC @ 10V | 50A Tc | 30V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHD5N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2012 | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.38mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Powers | 1 | TO-252AA | DRAIN | Single | 104W | 12 ns | 3V | 104W Tc | 5.3A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 500V | 5.3A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
SIHJ7N65E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | PowerPAK® SO-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 2V | 96W Tc | 7.9A | N-Channel | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 820pF @ 100V | 44nC @ 10V | 7.9A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU210PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 1.5Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 2.5W | 8.2 ns | 4V | 2.5W Ta 25W Tc | 2.6A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 17ns | 8.9 ns | 20V | 200V | 2.6A Tc | 95 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFR010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 250 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 25W | 10 ns | 25W Tc | 8.2A | SWITCHING | 0.2Ohm | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 250pF @ 25V | 10nC @ 10V | 50ns | 19 ns | 20V | 60V | 8.2A Tc | 50V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFU224PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.38mm | 1.1Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 7 ns | 2.5W Ta 42W Tc | 3.8A | SWITCHING | 20 ns | SILICON | N-Channel | 1.1 Ω @ 2.3A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 3.8A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
SIE810DF-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | No | 10 | 10-PolarPAK® (L) | No SVHC | 800μm | 5.16mm | 20MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 10 | R-XDSO-N4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 125mW | 20 ns | 1.3V | 5.2W Ta 125W Tc | 60A | SWITCHING | 100 ns | SILICON | N-Channel | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 13000pF @ 10V | 300nC @ 10V | 70ns | 10 ns | 12V | 20V | 45A | 60A Tc | 36 mJ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
IRFR9024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | -8.8A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 280mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 42W | 13 ns | -4V | 280mOhm | D-Pak | 2.5W Ta 42W Tc | 200 ns | -8.8A | 15 ns | P-Channel | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | 8.8A Tc | 60V | 570pF | 10V | ±20V | 280 mΩ | |||||||||||||||||||||||||||||||||||||||
SIHH26N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4V | 202W Tc | 25A | SWITCHING | 0.135Ohm | 600V | SILICON | N-Channel | 135m Ω @ 13A, 10V | 4V @ 250μA | 2815pF @ 100V | 116nC @ 10V | 25A Tc | 600V | 50A | 353 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
SI4136DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 3.5W | 34 ns | 1V | 3.5W Ta 7.8W Tc | 46A | SWITCHING | 0.0026Ohm | 50 ns | SILICON | N-Channel | 2m Ω @ 15A, 10V | 2.2V @ 250μA | 4560pF @ 10V | 110nC @ 10V | 26ns | 23 ns | 20V | 20V | 46A Tc | 4.5V 10V | ±20V |
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