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  • 2N6661

2N6661

MOSFET N-CH 90V 350MA 3TO-39


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-2N6661
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: PDF
  • Stock: 547
  • Description: MOSFET N-CH 90V 350MA 3TO-39 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Gold
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 6.25W Tc
Element Configuration Single
Power Dissipation 6.25W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 24V
Current - Continuous Drain (Id) @ 25°C 350mA Tj
Drain to Source Voltage (Vdss) 90V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 350mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 90V
Input Capacitance 50pF
Drain to Source Resistance 4Ohm
Rds On Max 4 Ω
Ambient Temperature Range High 150°C
Height 6.604mm
RoHS Status Non-RoHS Compliant
See Relate Datesheet