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  • 2N6661JTXV02

2N6661JTXV02

Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-2N6661JTXV02
  • Package: TO-205AD, TO-39-3 Metal Can
  • Datasheet: PDF
  • Stock: 642
  • Description: Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 725mW Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 725mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 860mA Tc
Drain to Source Voltage (Vdss) 90V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 860mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.86A
Drain-source On Resistance-Max 4Ohm
DS Breakdown Voltage-Min 90V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
See Relate Datesheet