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2N6667G

2N6667G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-2N6667G
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 854
  • Description: 2N6667G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6667
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 10A
Height 15.75mm
Length 10.53mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet