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  • 2N7000

2N7000

2N7000 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-2N7000
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 972
  • Description: 2N7000 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 200mA
Base Part Number 2N7000
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Power Dissipation 400mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 40pF
Drain to Source Resistance 1.2Ohm
Rds On Max 5 Ω
Nominal Vgs 2.1 V
Height 5.2mm
Length 4.8mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet