All Products

2N7000-G

MOSFET,N-CHANNEL ENHANCEMENT MODE,60V,5 Ohm3 TO-92BAG


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-2N7000-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 765
  • Description: MOSFET,N-CHANNEL ENHANCEMENT MODE,60V,5 Ohm3 TO-92BAG (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Radiation Hardening No
REACH SVHC No SVHC
Number of Channels 1
Factory Lead Time 6 Weeks
RoHS Status ROHS3 Compliant
Power Dissipation-Max 1W Tc
Contact Plating Tin
Lead Free Lead Free
Element Configuration Single
Mount Through Hole
Operating Mode ENHANCEMENT MODE
Mounting Type Through Hole
Power Dissipation 1W
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Turn On Delay Time 10 ns
Number of Pins 3
FET Type N-Channel
Weight 453.59237mg
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~150°C TJ
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Packaging Bulk
Vgs(th) (Max) @ Id 3V @ 1mA
Published 2008
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
JESD-609 Code e3
Part Status Active
Current - Continuous Drain (Id) @ 25°C 200mA Tj
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Number of Terminations 3
Vgs (Max) ±30V
ECCN Code EAR99
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 200mA
Additional Feature HIGH INPUT IMPEDANCE
Threshold Voltage 800mV
Subcategory FET General Purpose Power
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.2A
Voltage - Rated DC 60V
Drain-source On Resistance-Max 5Ohm
Technology MOSFET (Metal Oxide)
Drain to Source Breakdown Voltage 60V
Terminal Position BOTTOM
Feedback Cap-Max (Crss) 5 pF
Height 5.334mm
Current Rating 200mA
Length 5.21mm
Width 4.19mm
Number of Elements 1
See Relate Datesheet