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  • 2N7002-T1-E3

2N7002-T1-E3

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-2N7002-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 375
  • Description: VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 7.5Ohm
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 60V
Power Dissipation-Max 200mW Ta
Element Configuration Single
Current 15A
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.1 V
Feedback Cap-Max (Crss) 5 pF
Height 1.12mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
See Relate Datesheet