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2SA1182-Y,LF

2SA1182-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-2SA1182-Y,LF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 398
  • Description: 2SA1182-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Power - Max 150mW
Gain Bandwidth Product 200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -35V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -500mA
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
See Relate Datesheet