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  • 2SA1955FVBTPL3Z

2SA1955FVBTPL3Z

2SA1955FVBTPL3Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-2SA1955FVBTPL3Z
  • Package: SOT-723
  • Datasheet: PDF
  • Stock: 301
  • Description: 2SA1955FVBTPL3Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity PNP
Element Configuration Single
Power - Max 100mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 400mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage 12V
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 400mA
Collector Emitter Saturation Voltage -30mV
Max Breakdown Voltage 12V
Frequency - Transition 130MHz
hFE Min 300
RoHS Status RoHS Compliant
See Relate Datesheet