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2SA2007E

2SA2007E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2SA2007E
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 437
  • Description: 2SA2007E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

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Details

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Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 320 @ 2A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 400mA, 8A
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage -300mV
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 160
Continuous Collector Current -12A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 7 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 1999
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 25W
Element Configuration Single
Gain Bandwidth Product 80MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 12A
See Relate Datesheet